PART |
Description |
Maker |
K4M641633K |
1M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
K4S51153LF K4S51163LF-YPC_L_F1H K4S51163LF-YPC_L_F |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
Samsung Electronic SAMSUNG SEMICONDUCTOR CO. LTD.
|
T431616D T431616D-5C T431616D-5CG T431616D-5S T431 |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
|
Taiwan Memory Technology
|
IC42S16400A IC42S16400A-7TIG IC42S16400A-6BG IC42S |
1M x 16Bit x 4 Banks (64-MBIT) SDRAM DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
IC42S16160 |
4M x 16Bit x 4 Banks (256-MBIT) SDRAM 4米16 × 4银行56兆)内存
|
Integrated Silicon Solution, Inc.
|
IC42S16160 IC42S16160-7TIG IC42S16160-6TG IC42S161 |
4M x 16Bit x 4 Banks (256-MBIT) SDRAM DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
T436416C T436416C-6S T436416C-7S T436416C-7SG T436 |
4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM 4米16 SDRAM00x 16BitX 4Banks同步DRAM
|
http:// TM Technology, Inc.
|
IC42S16160-7TG IC42S16160-6TG |
4M x 16Bit x 4 Banks (256-MBIT) SDRAM 4M x 16Bit x 4 Banks (256-MBIT) SDRAM
|
Integrated Circuit Solu...
|
K4M28163LF K4M28163LF-C K4M28163LF-L K4M28163LF-N |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
SAMSUNG[Samsung semiconductor] Samsung Electronic SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4M64163PK K4M64163PK-BE75 K4M64163PK-RE75 K4M6416 |
4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 100万16 × 4银行4FBGA移动SDRAM
|
SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4S641633H-C K4S641633H-F1H K4S641633H-F1L K4S6416 |
4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 100万16 × 4银行4FBGA移动SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|