| PART |
Description |
Maker |
| AT49LV2048B AT49LV2048B-45TI AT49BV2048B-70TI |
AT49BV/LV2048B [Updated 10/02. 13 Pages] 2M bit. 2.7-Volt (BV)/3-Volt (LV) Read and2.7-Volt (BV)/3-Volt (LV) Byte-Write Flash
EEPROM EEPROM
|
TE Connectivity, Ltd.
|
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
| V43648S04VTG-10PC |
3.3 Volt 8M x 64 High Performance PC100 SDRAM Module with Unbuffered(3.3V 8M*64位高性能无缓冲器PC100 SDRAM模块)
3.3 Volt 8M x 64 High Performance PC100 SDRAM Module with Unbuffered(3.3V 8M*64浣???ц?????插?PC100 SDRAM妯″?)
|
Mosel Vitelic, Corp.
|
| IDT72T7295L6BBI IDT72T72115L6BBI IDT72T72105L4BB I |
2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 72-BIT CONFIGURATIONS 2.5伏高速TeraSyncTM FIFO72位配
2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 72-BIT CONFIGURATIONS 16K X 72 OTHER FIFO, 4.5 ns, PBGA324
|
Integrated Device Technology, Inc.
|
| IDT72V36110L7.5PFI IDT72V36100L7.5PFI IDT72V36110L |
3.3 VOLT HIGH-DENSITY SUPERSYNC II 36-BIT FIFO
3.3 VOLT HIGH-DENSITY SUPERSYNC II36-BIT FIFO
3.3 VOLT HIGH-DENSITY SUPERSYNC II?/a> 36-BIT FIFO
|
Integrated Device Technology, Inc.
|
| CRHV1206AA5M00FKDT AF200MFLFT |
SMD HIGH VOLT,1206,300MW,1500V,3 SIDED,5M,1%,100PPM HSD PART - Tape and Reel
CRHV Thick Film Chip Resistors, High Voltage
|
Vishay Techno
|
| AM29SL800B AM29SL800BB170EC AM29SL800BB170ECB AM29 |
High Speed CMOS Logic Octal Inverting Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-CDIP -55 to 125
High Speed CMOS Logic Quad 2-Input EXCLUSIVE OR Gates 14-CDIP -55 to 125
4-Bit Magnitude Comparator 16-CDIP -55 to 125
High Speed CMOS Logic Dual Positive-Edge Trigger D Flip-Flops with Set and Reset 14-CDIP -55 to 125
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.8伏的CMOS只超低电压快闪记忆体
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 170 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
| RD28F3204W30B70 GT28F640W30T85 |
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
|
Intel Corporation
|
| MA4P7470F-1072T |
2000 Volt & 3000 Volt PIN Diodes MA4PK2000, MA4PK3000
|
M/A-COM Technology Solutions, Inc.
|
| AT29LV020NBSP AT29LV020 |
2M bit, 3-Volt Read and 3-Volt Write Flash
From old datasheet system
|
Atmel Corp
|
| AT49F040NBSP AT49F040 |
4M bit, 5-Volt Read and 5-Volt Write Flash (Top or Bottom Boot)
From old datasheet system
|
Atmel Corp
|
|
