| PART |
Description |
Maker |
| GS72116TP-10 GS72116TP-15 GS72116TP GS72116J-15 GS |
15ns 128K x 16 2Mb asynchronous SRAM
8ns 128K x 16 2Mb asynchronous SRAM
10ns 128K x 16 2Mb asynchronous SRAM
12ns 128K x 16 2Mb asynchronous SRAM
|
GSI[GSI Technology]
|
| GS820E32AGT-133 |
64K x 32 2Mb Synchronous Burst SRAM 64K X 32 CACHE SRAM, 10 ns, PQFP100
|
GSI Technology, Inc.
|
| MT58L64L32D MT58L64L36D |
(MT58LxxxLxxD) 2Mb SRAM
|
Micron Semiconductor
|
| GS72108ATP78I GS72108AGP-10 GS72108AGP-10I GS72108 |
256K x 8 2Mb Asynchronous SRAM
|
ETC[ETC]
List of Unclassifed Manufacturers
|
| MT58L64L32F |
2Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through
|
MICRON
|
| K6F2016U4G K6F2016U4G-F K6F2016U4G-FF55 K6F2016U4G |
2Mb(128K x 16 bit) Low Power SRAM
|
http://
SAMSUNG[Samsung semiconductor]
|
| MT55L128L18F1 |
128K x 18, 3.3V I/O,ZBT SRAM(2Mb,3.3V输入/输出，静态RAM)
|
Micron Technology, Inc.
|
| N02L6181AB27I N02L6181AB27IT N02L6181AB7IT N02L618 |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
|
ON Semiconductor
|
| N02L83W2AT5I N02L83W2AT5IT N02L83W2AN25I N02L83W2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K ? 8 bit
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 8 bit
|
ON Semiconductor
|
| M36W432-ZAT M36W432B85ZA1T M36W432B70ZA1T M36W432T |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，开机区块快闪记忆体兆位256K x16的SRAM，多个存储产
|
STMicroelectronics N.V.
意法半导
|
