PART |
Description |
Maker |
GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
2SA1357 E000517 |
TRANSISTOR (STROBE FLASH/ AUDIO POWER AMPLIFIER APPLICATIONS) TRANSISTOR (STROBE FLASH, AUDIO POWER AMPLIFIER APPLICATIONS) STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIERAPPLICATIONS From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
2SC3072 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
2SA1834 |
Low Vce(sat) Transistor (Strobe flash) (-20V, -10A)
|
ROHM[Rohm]
|
GT25G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT20G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT20G102SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
2SA1314 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Applications
|
TOSHIBA
|
2SA1327A |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Amplifier Applications
|
TOSHIBA
|
2SC3279 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|