| PART |
Description |
Maker |
| MT48H32M16LFCM-8L |
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
|
Micron Technology
|
| 48SD3208 48SD3208RPFH 48SD3208RPFK 48SD3208RPFE 48 |
256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks
|
MAXWELL[Maxwell Technologies]
|
| 97SD3240RPQK 97SD3240 97SD3240RPQE 97SD3240RPQH 97 |
1.25Gb SDRAM 8-Meg X 40-Bit X 4-Banks
|
MAXWELL[Maxwell Technologies]
|
| 97SD3248 97SD324806 |
1.5Gb SDRAM 8-Meg X 48-Bit X 4-Banks
|
Maxwell Technologies
|
| AS4SD4M16DG-10/IT AS4SD4M16DG-10/XT AS4SD4M16DG-8/ |
4 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| AS4SD32M16DGC-75_ET AS4SD32M16DGC-75_IT AS4SD32M16 |
512Mb: 32 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| MT8D132M-XXX MT16D232M-XXX MT16D232-6X MT8D132-7X |
1 MEG, 2 MEG x 32 DRAM MODULES 1乙二醇，二乙二醇× 32 DRAM模块
|
Micron Technology, Inc.
|
| IDT71V416S10PHG IDT71V416S10PHGI IDT71V416S12PHG I |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PBGA48
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 10 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| MT28F160S3 |
2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16闪速存储器)
|
Micron Technology, Inc.
|
| HYS72V32220GU-75-C2 HYS64V32220GU-75-C2 HYS72V1630 |
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模.32M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块
|
Infineon Technologies AG
|
