| PART |
Description |
Maker |
| HY27SS08561A HY27US16561A |
(HY27xxxx561A) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
|
Hynix Semiconductor
|
| HYB25D256800BTL-5A HYB25D256160BT-5A HYB25D256800B |
256MBit Double Data Rata SDRAM 256Mbit SDRAM的双倍数据拉
|
Infineon Technologies AG
Infineon Technologies A...
|
| HYB25D256400BT HYB25D256800BC-7 HYB25D256400BT-7 H |
256Mbit (64Mx4) DDR200 (2-2-2) ？的256Mbit4Mx4）DDR200-2-2）？
256Mbit (64Mx4) DDR333 (2.5-3-3)
256Mbit (16Mx16) DDR200 (2-2-2)
256Mbit (32Mx8) DDR200 (2-2-2)
256Mbit (32Mx8) DDR266A (2-3-3)
256Mbit (64Mx4) DDR266A (2-3-3)
256Mb (64Mx4) FBGA DDR266A (2-3-3)
256-Mbit Double Data Rate SDRAM/ Die Rev. B
256-Mbit Double Data Rate SDRAM, Die Rev. B
|
http://
Infineon Technologies AG
Infineon Technologies A...
|
| K4S560432D-NC75 K4S560432D-NC7C K4S560432D-NC1H K4 |
256Mbit SDRAM, LVTTL, 133MHz
|
Samsung Electronic
|
| V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
LOW POWER 256Mbit SDRAM 3.3 VOLT/ 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
|
MOSEL-VITELIC
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| V53C1256162VALS7 V53C1256162VALS7E V53C1256162VALS |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
|
N.A.
ETC[ETC]
|
| K4S561632A K4S561632A-TC_L1H K4S561632A-TC_L1L K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S560432A K4S560432A-TC_L75 K4S560432A-TC_L80 K4S |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM16米x 4位4银行同步DRAM LVTTL
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6米x 4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| V54C3256 V54C3256804VS V54C3256404VS V54C3256404VT |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
256Mbit SDRAM 3.3 VOLT/ TSOP II / SOC BGA / WBGA PACKAGE 16M X 16/ 32M X 8/ 64M X 4
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| V54C3256164VALT6 V54C3256804VAT V54C3256404VAT V54 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 56Mbit SDRAM.3伏，第二的TSOP /系统芯片的BGA / WBGA包装16米x 162 × 84米4
|
Mosel Vitelic, Corp.
|
| K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S |
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
