| PART |
Description |
Maker |
| 1MBH10D-12009 |
1200V / 10A Molded Package
|
Fuji Electric
|
| 7MBR10NE120 |
IGBT(1200V/10A)
|
FUJI[Fuji Electric]
|
| 6MBI10S-120 |
IGBT MODULE(1200V/10A)
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| IRKD166 IRKC166 IRKC196-04 IRKC196-08 IRKC196-12 I |
1400V Single Diode in a INT-A-Pak package
1200V Single Diode in a INT-A-Pak package
1200V Doubler in a INT-A-Pak package
1600V Common Anode in a INT-A-Pak package
1600V Single Diode in a INT-A-Pak package
1600V Doubler in a INT-A-Pak package
1600V Common Cathode in a INT-A-Pak package
STANDARD RECOVERY DIODES
800V Doubler in a INT-A-Pak package
800V Single Diode in a INT-A-Pak package
1200V Common Anode in a INT-A-Pak package
800V Common Cathode in a INT-A-Pak package
1400V Doubler in a INT-A-Pak package
1400V Common Anode in a INT-A-Pak package 1400V共阳极的相依 Pak封装
1400V Common Cathode in a INT-A-Pak package 1400V共阴极的相依 Pak封装
NEW INT-A-pak Power Modules 新国甲柏电源模块
1200V Common Cathode in a INT-A-Pak package 1200伏共阴极的相依甲- Pak封装
800V Common Anode in a INT-A-Pak package 800V的共阳极的相依甲- Pak封装
230 A, 1200 V, SILICON, RECTIFIER DIODE
|
IRF[International Rectifier]
International Rectifier, Corp.
VISHAY SEMICONDUCTORS
|
| 2MBI200-120-01 2MBI200NB-120-01 |
1200V / 200A 2 in one-package
1200V / 200A 2 in one-package 1200 200安培在一2级封
IGBT module
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 4308R-102-224 4309R-104-R1 4309R-104-R2 4309R-101- |
4300R Series - Thick Film Molded SIPs
Thick Film Molded SIPs Superior package integrity Compatible with automatic insertion
Low profi le provides compatibility with DIPs
|
Bourns Electronic Solutions
|
| 26MB40A 36MB80A 35AMB12026MB 25AMB12026MB 35AMB120 |
SINGLE PHASE BRIDGE 单相桥式
4-Pole Solid State Relay w/o Protection SCR 单相桥式
IC REG LDO 1.0A 1.8V TO-252
IC DAA LITELINK III FW RING DET 3.3V TUBED
equipment to provide connection and isolation to/from the public telephone network
50V Bridge in a D-34A package
SINGLEPHASEBRIDGE
100V Bridge in a D-34A package
1200V Bridge in a D-34A package
400V Bridge in a D-34A package
600V Bridge in a D-34A package
800V Bridge in a D-34A package
1000V Bridge in a D-34A package
|
International Rectifier, Corp.
InternationalRectifier
IRF[International Rectifier]
|
| HGT1S5N120BNDS HGT1S5N120BNDS9A |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB
21A, 1200V, NPT Series N-Channel IGBTswith Anti-Parallel Hyperfast Diodes
|
Fairchild Semiconductor
|
| IKW03N120H2 Q67040-S4597 IKB03N120H2 IKP03N120H2 Q |
IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT D2Pak
1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package.
IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO247
IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO220
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
From old datasheet system
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
