| PART |
Description |
Maker |
| EIA1819-1P EIB1819-1P |
18.7-19.7GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1011-4P EIB1011-4P |
10.7-11.7GHz, 4W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFC36V7177A04 |
7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC39V7177A |
7.1 - 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段8瓦特内部匹配砷化镓场效应
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| MGFX39V0717 X390717 |
10.7 - 11.7GHz BAND 8W INTERNALLY MATCHD GaAs FET 10.7 - 11.7GHz频段8瓦特国内MATCHD砷化镓场效应
From old datasheet system
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2527 S452527 |
2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
From old datasheet system
|
Mitsubishi
|
| UMYM5-0600-0400 UMM5-0600-0400 UMYM5-0750-0750 UMY |
Safety Mat/Safety Mat Controller
|
Omron Electronics LLC
|
| R9-NBC-LPAR-GP |
Soft mat for great lap comfort
|
List of Unclassifed Man...
|
| LTC5508 LTC5508ESC6 LTC5508ESC6TRM LTC5508ESC6TRMP |
300MHz to 7GHz RF Power Detector with Buffered Output in SC70 Package; Package: SC70; No of Pins: 6; Temperature Range: -40°C to 125°C 300 MHz - 7000 MHz RF/MICROWAVE LINEAR DETECTOR, 12 dBm INPUT POWER-MAX
300MHz to 7GHz RF Power Detector in SC70
|
Linear Technology, Corp.
|
| BC7-12 |
Absorbent Glass mat technology for efficient gas recombinatino
|
B. B. Battery Co., Ltd.
|
