| PART |
Description |
Maker |
| GS88018BT-133 GS88018BT-133I GS88018BT-150 GS88018 |
133MHz 8.5ns 512K x 18 9Mb sync burst SRAM
150MHz 7.5ns 512K x 18 9Mb sync burst SRAM
166MHz 7ns 512K x 18 9Mb sync burst SRAM
200MHz 6.5ns 512K x 18 9Mb sync burst SRAM
225MHz 6ns 512K x 18 9Mb sync burst SRAM
250MHz 5.5ns 512K x 18 9Mb sync burst SRAM
|
GSI Technology
|
| CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的（256 × 36/512K × 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| P4C1049L-70L36MB P4C1049-45JMB P4C1049-55JMB P4C10 |
HIGH SPEED 512K x 8 STATIC CMOS RAM 高速为512k × 8静态CMOS存储
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 25 ns, PDFP36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 20 ns, PDFP36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 35 ns, PDFP36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 35 ns, CDSO36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 35 ns, PDSO36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 25 ns, CDSO36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 70 ns, CDSO36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 45 ns, PDFP36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 70 ns, PDFP36
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| CY7C1386DV25-250BZXI CY7C1386DV25-250BZI CY7C1386D |
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3.4 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 18兆位（为512k × 36/1M × 18）流水线双氰胺同步静态存储器
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3.4 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS8160EV18AT-150I GS8160EV18AT-250I GS8160EV18AT-3 |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8161E18BT-150I GS8161E18BD-250 GS8161E18BGD-150I |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS816018BT-200I GS816018BT-150 GS816018BT-150I GS8 |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS816032T-166I GS816018T-133 GS816018T-133I GS8160 |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
GSI Technology
|
| IDT70V7339S IDT70V7339S200BFI IDT70V7339S133DD IDT |
HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V的为512k × 18 SYNCHRONOU开户银行可切换双端口静态RAM.5V的接
HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 512K X 18 DUAL-PORT SRAM, 15 ns, PQFP144
HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 512K X 18 DUAL-PORT SRAM, 10 ns, PQFP144
|
Integrated Device Technology, Inc.
|
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