| PART |
Description |
Maker |
| 6N40 6N40L-TF3-T 6N40G-TF3-T |
6 Amps, 400 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| SDR8400S4 |
400 AMPS 400 - 1200 VOLTS 15 usec STANDARD RECOVERY HIGH CURRENT RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| NGB18N40CLBT4 |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on)
18 Amps, 400 Volts N-Channel D2PAK
|
ON Semiconductor
|
| NTD32N06-1 NTD32N06-1G NTD32N06T4G NTD32N06 NTD32N |
Power MOSFET 32 Amps, 60 Volts
32 Amps, 60 Volts, N−Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| NTB10N40 |
Power MOSFET 10 Amps, 401 Volts N-Channel(10A,400V,N沟道增强型MOS场效应管(D2PAK封装 10 A, 400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| NGB8204NT4 NGB8204NT4G NGB8204N |
Ignition IGBT 18 Amps, 400 Volts
|
ONSEMI[ON Semiconductor]
|
| SDR9400S20 SDR9400S10 SDR9400S15 |
400 AMPS 1000 ─ 2000 VOLTS 25 μsec STANDARD RECOVERY HIGH CURRENT RECTIFIER
400 AMPS 1000 Α 2000 VOLTS 25 レsec STANDARD RECOVERY HIGH CURRENT RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SFS2329 SFS2326 SFS2327 SFS2328 |
1.6 AMPS 200 - 400 VOLTS SILICON CONTROLLED RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SFS1829 SFS1826 SFS1827 SFS1828 |
1.6 AMPS 200 ─ 400 VOLTS SILICON CONTROLLED RECTIFIER
1.6 AMPS 200 Α 400 VOLTS SILICON CONTROLLED RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR1004F SDR1010F SDR1008F SDR1006F |
100 AMPS, 400-1000 VOLTS 270 nsec FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| NTF3055-160T1 NTF3055-160T3 NTF3055-160T3LF NTF305 |
TRANSISTOR|MOSFET|N-CHANNEL|60VV(BR)DSS|2AI(D)|SOT-223
From old datasheet system
Power MOSFET 2.0 Amps, 60 Volts N?Channel SOT23(2A,60V逻辑电平,N通道，SOT-223封装的功率MOSFET)
Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223 2 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
|
ONSEMI[ON Semiconductor]
|
| SDR8300S8 SDR8300S10 SDR8300S12 SDR8300S4 SDR8300S |
300 AMPS 400 - 1200 VOLTS 15 usec STANDARD RECOVERY HIGH CURRENT RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
