| PART |
Description |
Maker |
| BFP460 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages
|
Infineon
|
| 43BDIE2V |
RAD-hardened precision bipolar single operational amplifier
|
STMicroelectronics
|
| HS0-6254RH-Q HS1-6254RH HS-6254RH 5962F9764101VXC |
Radiation Hardened Ultra High Frequency
NPN Transistor Array(抗辐射甚高频NPN晶体管阵
1500PF 50V 0805
BJT
Radiation Hardened Ultra High Frequency NPN Transistor Array 辐射加固超高频NPN晶体管阵
|
Intersil Corporation
Intersil, Corp.
|
| AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-310 |
TERM BLOCK HDR 5.08MM 3POS PCB
Low Current/ High Performance NPN Silicon Bipolar Transistor
Low Current High Performance NPN Silicon Bipolar Transistor
Low Current, High Performance NPN Silicon Bipolar Transistor
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| 2N3109 2N3109E4 |
1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Bipolar NPN Device
|
SEMELAB LTD
SEME-LAB
|
| BDY96 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3
Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=10 / Hfe=15-60 / fT(Hz)=10M / Pwr(W)=40
|
Semelab
|
| 2N5337X |
Bipolar NPN Device in a Hermetically sealed TO39
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-39
|
Seme LAB
|
| BUX98AF BUX98AFR1 |
30 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-204AE
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| SFBDY73 BDY73 BDY73.MOD |
15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
Bipolar NPN Device
|
SEMELAB LTD
SEME-LAB[Seme LAB]
|
| ISL70001SRH ISL70001SRHF_PROTO ISL70001SRHQF ISL70 |
Radiation Hardened and SEE Hardened 6A Synchronous Buck Regulator with Integrated MOSFETs
|
Intersil Corporation
|
