| PART |
Description |
Maker |
| 2SC4694 |
Adoption of MBIT process. High DC current gain. High VEBO (VEBO 25V).
|
TY Semiconductor Co., Ltd
|
| 2SC3675 |
900V/100mA High-Voltage Amplifier High-Voltage Switching Applications
High-Voltage Amp, High-Voltage Switching Applications
High-Voltage Amp High-Voltage Switching Applications
High-Voltage Amp/ High-Voltage Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| FC156 |
High-Frequency Low-Noise Amp, Differential Amp Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SC4446 |
Very small-sized package High VEBO.Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| SMLA42CSM |
SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE
Silicon NPN High Voltage Transistor In Ceramic Surface Mount (Vcbo:300V,Vceo:300V,Vebo:6V)(N沟道增强高电压功率MOS场效应管(Vcbo:300V,Vceo:300V,Vebo:6V)) 高压硅npn型晶体管在陶瓷表面贴装（Vcbo00V，Vceo00V，Vebo6V的）（不适用沟道增强型，高电压功率马鞍山场效应管（Vcbo00V，Vceo00V，Vebo6V的）
|
SemeLAB
SEME-LAB[Seme LAB]
Motorola Mobility Holdings, Inc.
|
| 2SA1418 2SC3648 2SC3648T 2SA1418T 2SC3648S |
High-Voltage Switching/ Predriver Applications
High-Voltage Switching Predriver Applications
High-Voltage Switching, Predriver Applications
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 700MA I(C) | SOT-89
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 700MA I(C) | SOT-89
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 160V五（巴西）总裁| 700mA的一（c）|采用SOT - 89
|
SANYO[Sanyo Semicon Device]
|
| 2SA1683 2SC4414 |
High-Frequency General-Purpose Amp/ High-Frequency Power Amp Applications
High-Frequency General-Purpose Amp, High-Frequency Power Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC2344 2SA1011 |
High-Voltage Switching/ AF Power Amp/ 100W Output Predriver Applications
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications 高压开关，自动对焦功率放大器，100W的输出预驱动器应
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
|
| 2SC3820 |
High-hFE/ AF Amp Applications
High-hFE, AF Amp Applications
High-hFE AF Amp Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| BCP54-10 BCP56-10 BCP56 |
NPN Medium Power Transistor
High collector current 1.3 W power dissipation. emitter-base voltage VEBO 5 V
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| ASI10748 VMB80-28F ALR015 ASI10511 ASI10770 MRF314 |
NPN Silicon RF Power Transistor(Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)) VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| 2SK222 |
High-Frequency/ Low-Noise Amp Applications
HIGH-FREQUENCY, LOW-NOISE AMP APPLICATIONS
|
Sanyo Semicon Device
|
