PART |
Description |
Maker |
HY57V641620ELTP-5 HY57V641620ELTP-6 HY57V641620ELT |
SDRAM - 64Mb 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
|
Hynix Semiconductor
|
HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4Mx16|3.3V|4K|H|SDR SDRAM - 64M x16 SDRAM x16内存
|
Hynix Semiconductor TT electronics Semelab, Ltd.
|
HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb 256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
M368L3313DTL-CB0 M368L3313DTL-CB3 M368L3313DTL-CA2 |
256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)
|
Samsung semiconductor
|
M383L2828CT1 |
M383L2828CT1 DDR SDRAM 184pin DIMM 128Mx72 DDR SDRAM Data Sheet
|
Samsung Electronic
|
M312L5628MT0 |
M312L5628MT0 DDR SDRAM 184pin DIMM 256Mx72 DDR SDRAM Data Sheet
|
Samsung Electronic
|
M312L2828CT0 |
M312L2828CT0 DDR SDRAM 184pin DIMM 128Mx72 DDR SDRAM Data Sheet
|
Samsung Electronic
|
HYMD212G726ALS4-H HYMD212G726ALS4-K HYMD212G726ALS |
128Mx72|2.5V|M/K/H/L|x36|DDR SDRAM - Registered DIMM 1GB 128Mx72 | 2.5V的| /升| x36 | DDR SDRAM内存-内存1GB的注 Registered DDR SDRAM DIMM 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
W942508CH W942508CH-75 W942508CH-5 W942508CH-6 W94 |
DDR SDRAM (Double Data Rate) 8M x 4 BANKS x 8 BIT DDR SDRAM
|
Winbond Electronics WINBOND[Winbond]
|
HYMD564646L8 HYMD5646468 HYMD564646XXX HYMD5646468 |
Unbuffered DDR SDRAM DIMM 64Mx64|2.5V|K/H/L|x8|DDR SDRAM - Unbuffered DIMM 512MB 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
HYMD532646A6-H HYMD532646A6-K HYMD532646A6-L HYMD5 |
DDR SDRAM - Unbuffered DIMM 256MB Unbuffered DDR SDRAM DIMM 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
EM484M1644VTA-55L |
64Mb SDRAM
|
Electronic Theatre Controls, Inc.
|