| PART |
Description |
Maker |
| SPP08P06P09 SPP08P06PG |
8.8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
P-Channel Enhancement mode Avalanche rated dv/dt rated
|
Infineon Technologies AG
|
| IRF044 IRF044-15 |
Repetitive Avalanche Ratings
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
60V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
|
International Rectifier
|
| IXFH52N30Q IXFK52N30Q IXFT52N30Q |
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
From old datasheet system
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| BUZ110SL Q67040-S4004-A2 |
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IPD400N06NG IPD400N06NG08 |
OptiMOS? Power-Transistor Features N-channel enhancement - normal level Avalanche rated
OptiMOS庐 Power-Transistor Features N-channel enhancement - normal level Avalanche rated
|
Infineon Technologies AG
|
| SFF23N60S1 SFF23N60S2 FT0029B FT0029B-15 |
Avalanche Rated N-channel MOSFET
|
Solid States Devices, Inc
Solid States Devices, I...
|
| SFF116N10M SFF116N10Z |
Avalanche Rated N-channel MOSFET
|
Solid States Devices, Inc
|
| IXTA1R4N100P IXTY1R4N100P IXTP1R4N100P |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P |
P-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTY1R4N60P IXTP1R4N60P IXTU1R4N60P |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTA160N10T7 |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
