| PART |
Description |
Maker |
| CM75E3U-12H |
Chopper IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| IRF710 FN2310 |
2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N娌??澧?己?????OS?烘?搴??)
From old datasheet system
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
HARRIS SEMICONDUCTOR
Intersil Corporation
|
| HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT |
45 A, 600 V, UFS N-Channel IGBT
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB
45A, 600V, UFS Series N-Channel IGBT 5A00V的，的ufs系列N沟道IGBT
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRFR9120 IRFU9120 FN3987 |
5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
P Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| APT150GN60JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 600; VCE(sat) (V): 1.4; IC (A): 123; 220 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Advanced Power Technology
|
| APT15GT60BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 15; 30 A, 600 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| CM150TU-12H |
240 x 128 pixel format, CFL Backlight with power harness 150 A, 600 V, N-CHANNEL IGBT
Six IGBTMOD 150 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| FCPF600N60Z |
N-Channel SuperFETII MOSFET 600 V, 7.4 A, 600 m
N-Channel SuperFET? II MOSFET
|
Fairchild Semiconductor
|
| 600-055 |
600-055 Calibration Key and 600-072-1 Standard and 600-086-1 Micro Gauges
|
Glenair, Inc.
|
| RFH10N50 RFH10N45 |
CAP 1000PF 200V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs
10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs 10 A, 450 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| MTP1N60E |
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
|
| STGB10NC60HDT4 STGB10NC60HD08 STGF10NC60HD STGD10N |
600 V - 10 A - very fast IGBT
20 A, 600 V, N-CHANNEL IGBT, TO-252AA
|
STMicroelectronics
|
|
