| PART |
Description |
Maker |
| MAX3658BE/D-B0D |
622Mbps, Low-Noise, High-Gain Transimpedance Preamplifier
|
MAXIM - Dallas Semiconductor
|
| MAX3658BE/D MAX3658AE/D MAX3658AETA |
622Mbps / Low-Noise / High-Gain Transimpedance Preamplifier
622Mbps, Low-Noise, High-Gain Transimpedance Preamplifier
|
Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
|
| AGB3304 AGB3304_REV_0.0 AGB3304S24Q1 |
50 High IP3 Low Noise Wideband Gain Block
Gain Block Amplifiers
From old datasheet system
50з High IP3 Low Noise Wideband Gain Block
|
ANADIGICS[ANADIGICS, Inc]
|
| BFP193 Q62702-F1282 BFP193Q62702-F1282 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| AD605AR-REEL AD605AR-REEL7 AD605BR-REEL AD605BR-RE |
6.5V; 1.2-1.4W; dual, low-noise, single-supply variable gain amplifier. For ultrasound and sonar time-gain control, high performance AGC systems
|
Analog Devices
|
| AGB3312 AGB3312S24Q1 |
50 High Linearity Low Noise Internally Biased Wideband Gain Block
50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block
Gain Block Amplifiers
50з High Linearity Low Noise Internally Biased Wideband Gain Block
|
ANADIGICS[ANADIGICS, Inc]
|
| Q62702-F1382 BFP183 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管（对于低噪声，高增益2毫安0毫安的集电极电流宽带放大器）
NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon Technologies AG
|
| PE15A1006 |
40 dB Gain, 1.1 dB NF, 15 dBm, 3.1 GHz to 3.5 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| 2SC5064 |
Low Noise and High Gain
|
Inchange Semiconductor ...
|
| BFP420H6327 |
For high gain low noise amplifiers
|
Infineon Technologies AG
|
| SGA-8343Z SGA-8343 |
Low Noise, High Gain SiGe HBT
|
Stanford Microdevices
SIRENZA[SIRENZA MICRODEVICES]
|
