| PART |
Description |
Maker |
| IDP08E65D1 |
High Power RF LDMOS FETs
Temperature stable behaviour of key parameters
|
Infineon Technologies AG
Infineon Technologies A...
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| SI6968BEDQRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI4684DY-RC |
R-C Thermal Model Parameters
|
Vaishali Semiconductor
|
| SI4434DY-RC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI7401DN-RC |
R-C Thermal Model Parameters
|
VISAY[Vishay Siliconix]
|
| SI3865BDVRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| ST13003DN |
Low spread of dynamic parameters
|
STMicroelectronics
|
| UPD70F3726 |
Parameters for 32-Bit V850ES/KX2 Devices
|
NEC Electronics Inc.
|
| AN1783 |
Determining MCU Oscillator Start-Up Parameters
|
Motorola
|
| 0809LD30P |
Compant High-Insulation Power Relay, Polarized, 10A
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
