| PART |
Description |
Maker |
| EM4169B6WW11 EM4169B6WW7E EMMICROELECTRONIC-EM4169 |
128 bit Read/Write Contactless Identification Device with OTP function 128位读/写非接触识别装置的OTP功能
|
EM Microelectronic
|
| EM4550 |
(EM4450 / EM4550) 1 KBit Read/Write Contactless Identification Device
|
EM Microelectronic
|
| CY14B512Q2A-SXIT CY14E512Q CY14C512Q |
512-Kbit (64 K x 8) SPI nvSRAM Infinite read, write, and RECALL cycles
|
Cypress Semiconductor
|
| EM4350A5WP11 EM4350A5WP21 EM4350A5WP21E EM4350A5WP |
1 KBit READ / WRITE CONTACTLESS IDENTIFICATION DEVICE
|
EMMICRO[EM Microelectronic - MARIN SA]
EM Microelectronic - MA...
|
| AT49LV4096A AT49BV4096A AT49LV4096A-70C5I |
256K X 16 FLASH 2.7V PROM, 70 ns, PBGA48
4M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot
4M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot
|
ATMEL CORP
|
| BH6627FS |
Magnetic Disk LSIs > FDD read/write amplifier
Read /Write amplifier for FDD
Read / Write Amplifier for FDD(FDD的读/写放大器)
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| S70WS512N00BFWA23 S70WS512N00BAWAB3 S70WS512N00BAW |
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory 同硅晶片堆叠多芯片产品（MCP）的512兆位2兆16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
|
| SSI32R2020R-4CL SSI32R2020R-4CV SSI32R2020R-6CV SS |
6-Channel Read/Write Circuit
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
10-Channel Disk Read/Write Circuit 10通道磁盘写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
DB Lectro, Inc.
Lattice Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
|
| HEF4505B HEF4505BF HEF4505BD HEF4505BN HEF4505BP H |
64-bit, 1-bit per word random access read/write memory
From old datasheet system
64-bit/ 1-bit per word random access read/write memory
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| AT49BV002A AT49BV002AN AT49V002ANT AT49V002AT AT49 |
AT49BV002A(N)(T) [Updated 8/03. 19 Pages] 256K x 8 (2M bit). 2.7-Volt Read and 2.7-Vold Write. Top or Bottom Boot Parametric Block Flash
256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Top Boot Parametric Block Flash
256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Bottom Boot Parametric Block Flash
|
Atmel
|
| VM118-4F VM118-2PO VM118-6P VM118-6PL VM118-6PO VM |
6-Channel Read/Write Circuit 6通道写电
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
Digital Data Communications GmbH
Stackpole Electronics, Inc.
|
