PART |
Description |
Maker |
HN29WT800 29WT800 |
1048576-word ′ 8-bit / 524288-word ′ 16-bit CMOS Flash Memory From old datasheet system
|
hitachi
|
M5M532R16J-10 M5M532R16J-12 M5M532R16J-15 M5M532R1 |
0.5 in Diameter, 200mA Single Deck Rotary Switch From old datasheet system 524288-BIT CMOS STATIC RAM 524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
GM72V161621ET GM72V161621 GM72V161621ELT |
524,288 word x 16 Bit x 2 Bank - SYNCHRONOUS DYNAMIC RAM(SDRAM) 524288 word x 16 Bit x 2 Bank SDRAM
|
LG Semiconductor List of Unclassifed Manufacturers ETC
|
M5M5W816WG-70HI |
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M44800CJ-7S M5M44800CJ-5S M5M44800CTP-6S |
FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
M5M5V408BFP M5M5V408BKR M5M5V408BKV M5M5V408BRT M5 |
From old datasheet system 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M5Y5636TG-20 M5M5Y5636TG-22 M5M5Y5636TG-25 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M5Y5636TG-20 M5M5Y5636TG-22 M5M5Y5636TG-25 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
M5M5W816WG-85HI M5M5W816WG M5M5W816WG-55HI M5M5W81 |
Memory>Low Power SRAM 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
RENESAS[Renesas Electronics Corporation]
|
M5M5T5636UG-20 M5M5T5636UG-25 M5M5T5636UG-22 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM RECTIFIER SCHOTTKY SINGLE 1A 40V 45A-Ifsm 0.53Vf 0.1A-IR SMB 3K/REEL
|
Mitsubishi Electric Corporation
|
M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|