| PART |
Description |
Maker |
| DF3A6.8LFE |
Diodes for Protecting Against ESD
|
TOSHIBA[Toshiba Semiconductor]
|
| DF2S12FU-14 |
TOSHIBA Diodes for Protecting against ESD
|
Toshiba Semiconductor
|
| DF5A6 |
DIODES (DIODES FOR PROTECTING AGAINST ESD)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 01ZAB8.2 01ZA8 |
DIODES( DIODES FOR PROTECTING AGAINST ESD)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| DF3A6 |
DIODES (DIODES FOR PROTECTING AGAINST ESD)
|
Toshiba Corporation
|
| DF546 |
DIODES (DIODES FOR PROTECTING AGAINST ESD)
|
Toshiba Corporation
|
| DF3A6 |
DIODES (DIODES FOR PROTECTING AGAINST ESD)
|
TOSHIBA[Toshiba Semiconductor]
|
| CZRW55C10-G CZRW55C11-G CZRW55C12-G CZRW55C13-G CZ |
Zener Diodes, P-D=0.5Watts, V-Z=10V
Zener Diodes, P-D=0.5Watts, V-Z=11V
Zener Diodes, P-D=0.5Watts, V-Z=12V
Zener Diodes, P-D=0.5Watts, V-Z=13V
Zener Diodes, P-D=0.5Watts, V-Z=15V
Zener Diodes, P-D=0.5Watts, V-Z=16V
Zener Diodes, P-D=0.5Watts, V-Z=20V
Zener Diodes, P-D=0.5Watts, V-Z=22V
Zener Diodes, P-D=0.5Watts, V-Z=27V
Zener Diodes, P-D=0.5Watts, V-Z=2.4V
Zener Diodes, P-D=0.5Watts, V-Z=2.7V
|
Comchip Technology
|
| DF5A3.3F |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 19.52 to 20.39; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 二极管，不受ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 19.52 to 20.39; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Diodes for Protecting against ESD
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| MA6X126 |
Small-signal device - Diodes - Swicthing Diodes
From old datasheet system
Switching Diodes
|
Matsshita / Panasonic
|
