| PART |
Description |
Maker |
| HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160
QUAD 2-INPUT NOR GATE
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| 2SB1561-Q |
Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V
|
TY Semiconductor Co., Ltd
|
| 2SB1219A |
Large collector current IC. Collector-base voltage VCBO -60 V
|
TY Semiconductor Co., Ltd
|
| FZT591 |
Power Collector dissipation: PC=2W, Continuous Collector Current: IC=-1A
|
TY Semiconductor Co., Ltd
|
| JAN1N5300U JANS1N5314UR-1 1N5283UR-1 1N5284UR-1 1N |
Current Limiter Diode
Single Inverter Gate 5-SOT-23 -40 to 85 1.5 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.43 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
4-Pin DIP Phototransistor Output Optocoupler 1.4 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 3.6 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.27 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 4.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.33 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 1.4 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.91 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.39 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
Pulse-Width-Modulation (Pwm) Control Circuit 16-SOIC 0 to 70
CURRENT REGULATOR DIODES
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
|
| 2SC5212 |
Small Signal Transistor
Low collector saturation voltage VCE(sat)=0.2V typ. High collector current ICM=1A.
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| DS1393U-18 DS1392U-33 DS1393U-33 DS1390 DS1390U-3 |
RIBBON CABLE, 40WAY, PER M; Cores, No. of:40; Conductor make-up:7/36AWG; Wire size, AWG:28AWG; Impedance:119R; Pitch:1.27mm; Voltage rating, AC:50V; Colour:Grey; Capacitance:70.5pF/m; Approval Bodies:UL; Approval category:Style RoHS Compliant: Yes
Low-Voltage SPI/3-Wire RTCs with Trickle Charger 1 TIMER(S), REAL TIME CLOCK, PDSO10
IGBT Module; Continuous Collector Current, Ic:200A; Collector Emitter Saturation Voltage, Vce(sat):3.4V; Power Dissipation, Pd:1500W; Collector Current:200A; Collector Emitter Voltage, Vceo:1.2kV; Leaded Process Compatible:No RoHS Compliant: No
|
Maxim Integrated Produc...
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
MAXIM - Dallas Semiconductor
|
| DC337-16-25-40 BC327-16 BC328-16 ON0144 BC328-25 |
Amplifier Transistors(PNP Silicon)
From old datasheet system
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
CASE 29-04, STYLE 17 TO-2 (TO-26AA)
|
ON Semiconductor
Siemens Semiconductor Group
|
| NTE5232A NTE5174A NTE5191A NTE5191AK NTE5205AK NTE |
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 170V. Zener test current Izt = 15mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 150V. Zener test current Izt = 17mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 130V. Zener test current Izt = 19mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 110V. Zener test current Izt = 23mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 100V. Zener test current Izt = 25mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 87V. Zener test current Izt = 29mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 68V. Zener test current Izt = 37mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 60V. Zener test current Izt = 43mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 51V. Zener test current Izt = 50mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 47V. Zener test current Izt = 55mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 43V. Zener test current Izt = 60mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 36V. Zener test current Izt = 70mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 30V. Zener test current Izt = 85mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 27V. Zener test current Izt = 95mA.
Zener Diode, 10 Watt ±5% Tolerance
Zener Diode, 10 Watt 【5% Tolerance
Zener Diode 10 Watt 5% Tolerance
Zener Diode / 10 Watt 5% Tolerance
Zener Diode, 10 Watt % Tolerance
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 28V. Zener test current Izt = 90mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 33V. Zener test current Izt = 75mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 39V. Zener test current Izt = 65mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 45V. Zener test current Izt = 55mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 50V. Zener test current Izt = 50mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 56V. Zener test current Izt = 45mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 62V. Zener test current Izt = 40mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 75V. Zener test current Izt = 33mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 91V. Zener test current Izt = 28mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 105V. Zener test current Izt = 25mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 120V. Zener test current Izt = 20mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 140V. Zener test current Izt = 18mA.
Zener diode, 10 watt, -5% tolerance. Nominal zener voltage Vz = 160V. Zener test current Izt = 16mA.
|
NTE[NTE Electronics]
NTE Electronics, Inc.
Sony, Corp.
|
| HDMP-1014 HDMP-1012 |
Bipolar Transistor; Collector Emitter Voltage, Vceo:400V; Transistor Polarity:N Channel; Power Dissipation:250W; C-E Breakdown Voltage:400V; DC Current Gain Min (hfe):10; Collector Current:50A; Package/Case:TO-3
Phase Lock Loop (PLL) IC; Number of Circuits:1; Package/Case:14-DIP; Mounting Type:Through Hole 4Low成本千兆速率发接收芯片
|
Agilent(Hewlett-Packard)
|
| BCP49 Q62702-C2137 BCP29 Q62702-C2136 |
From old datasheet system
NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
|
SIEMENS[Siemens Semiconductor Group]
|
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