| PART |
Description |
Maker |
| IXFK360N10T IXFX360N10T |
GigaMOS Trench HiperFET Power MOSFET
|
IXYS Corporation
|
| IXFN320N17T2 |
GigaMOS TrenchT2 HiperFET Power MOSFET
|
IXYS Corporation
|
| IXFN520N075T2 |
TrenchT2 GigaMOS HiperFET Power MOSFET
|
IXYS Corporation
|
| IXFK240N15T2 IXFX240N15T2 |
GigaMOS TrenchT2 HiperFET Power MOSFET
|
IXYS Corporation
|
| IXFZ520N075T2 |
TrenchT2 GigaMOS HiperFET Power MOSFET
|
IXYS Corporation
|
| IXFN180N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电0mΩ的N沟道增强型HiPerFET功率MOSFET)
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFN200N06 IXFN200N07 IXFN180N06 IXFN180N07 |
60V HiPerFET power MOSFET
HiPerFET Power MOSFETs
|
IXYS[IXYS Corporation]
http://
|
| IXFX120N20 IXFK120N20 |
HiPerFET Power MOSFETs
CAP 0.01UF 50V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 120 A, 200 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXFM6N90 IXFH6N100 IXFH6N90 IXFM6N100 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电2.0Ω的N沟道增强HiPerFET功率MOSFET) 6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXFRB24N50Q IXFR24N50Q IXFR26N50Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
| IXFR4N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Backside)
|
IXYS
|
