| PART |
Description |
Maker |
| FDC699PF077 |
P-Channel 2.5V Power Mosfet MOSFET Recommend FDC699P_F077; Package: SSOT-6 FLMP; No of Pins: 6; Container: Tape & Reel 7 A, 20 V, 0.022 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| ISL6622 ISL6622CRZ-T ISL6622CBZ |
VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers; Temperature Range: 0°C to 70°C; Package: 10-DFN T&R
|
Intersil Corporation
|
| ISL6622B ISL6622BIRZ ISL6622BIBZ ISL6622BCBZ-T ISL |
VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers; Temperature Range: 0°C to 70°C; Package: 8-SOIC T&R 3 A AND GATE BASED MOSFET DRIVER, PDSO8
VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 10-DFN T&R 3 A AND GATE BASED MOSFET DRIVER, PDSO10
|
Intersil Corporation
Intersil, Corp.
|
| FDMS86101 |
100V N-Channel PowerTrench® MOSFET; 8-Power 56 (PQFN) 12.4 A, 100 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA
|
Fairchild Semiconductor, Corp.
|
| EDI8F32259C35MNC EDI8F32259C35MMC EDI8G32259B12MZC |
High Speed, Single Channel, Power MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 8-PDIP
x32 SRAM Module
TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -40°C to 85°C; Package: 32-QFN T&R X32号的SRAM模块
|
Integrated Device Technology, Inc.
Samsung Semiconductor Co., Ltd.
|
| FDMS7650 |
30V N-Channel PowerTrench® MOSFET; 8-Power 56 (PQFN) 36 A, 30 V, 0.99 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel PowerTrench? MOSFET 30 V, 60 A, 0.99 mΩ
N-Channel PowerTrench垄莽 MOSFET 30 V, 60 A, 0.99 m楼?
|
Fairchild Semiconductor, Corp.
|
| NTK3139P NTK3139PT1G NTK3139PT5G |
Power MOSFET 20 V, 780 mA, Single P-Channel
POWER MOSFET −20 V, −780 MA, SINGLE P−CHANNEL WITH ESD PROTECTION, SOT−723
Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723 0.78 A, 20 V, 0.48 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| HUF75329D3 HUF75329D3S HUF75329D3ST HUF75329D3STNL |
20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 20 A, 55 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| LTC1154CS8TRPBF LTC1154HS8PBF LT1910 LTC4441-1 LTC |
High-Side Micropower MOSFET Driver; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C BUF OR INV BASED MOSFET DRIVER, PDSO8
High-Side Micropower MOSFET Driver; Package: SO; No of Pins: 8; Temperature Range: -40° to 125°C BUF OR INV BASED MOSFET DRIVER, PDSO8
High Side Micropower MOSFET Driver Fully Enhances N-Channel Power MOSFETs
|
Linear Technology, Corp.
|
| NTF3055L108 NTF3055L108D NTF3055L108T1 NTF3055L108 |
Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 3 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET 3.0 A, 60 V, Logic Level N-Channel SOT-223(3A,60V逻辑电平,N通道，SOT-223封装的功率MOSFET)
Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
|
ONSEMI[ON Semiconductor]
|
| APL602J |
Power MOSFET; Package: ISOTOP®; ID (A): 43; RDS(on) (Ohms): 0.125; BVDSS (V): 600; 43 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
LINEAR MOSFET 600V 43A 0.125?/a>
LINEAR MOSFET 600V 43A 0.125з
|
Microsemi, Corp.
Advanced Power Technology
|
|
