| PART |
Description |
Maker |
| 2SK3524 |
N-CHANNE SILLCON POWER MOSFET
N-CHANNE SILLCON POWER MOSFET - CHANNE SILLCON功率MOSFET
|
Fuji Electric
Electronic Theatre Controls, Inc.
|
| IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 60 V, 0.023 ohm, N-CHANNE
81 A, 60 V, 0.012 ohm, N-CHANNE
27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
VISHAY INTERTECHNOLOGY INC
|
| HUF76407D3 HUF76407D3S HUF76407D3ST |
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
11A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET
|
Fairchild Semiconductor
|
| IRHYK57133CMSE IRHYK57133CMSEPBF |
20 A, 130 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, TO-257AA, 3 PIN
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
|
International Rectifier, Corp.
Integrated Device Technology, Inc.
IRF[International Rectifier]
|
| SHD226703 |
30V N-Channel PowerTrench MOSFET 27 A, 200 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
HERMETIC POWER MOSFET - N-CHANNEL
|
Sensitron Semiconductor
|
| SHDCG225701 SHD225701 |
LOW RDS HERMETIC POWER MOSFET - N-CHANNEL 90 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Sensitron Semiconductor
SENSITRON[Sensitron]
|
| SHD219403 |
HERMETIC POWER MOSFET N-CHANNEL
|
Sensitron
|
| SHD219405 |
HERMETIC POWER MOSFET N-CHANNEL
|
Sensitron
|
| SHD225503 |
HERMETIC POWER MOSFET N-CHANNEL
|
Sensitron
|
| SHD226305B |
HERMETIC POWER MOSFET N-CHANNEL
|
Sensitron
|
| SHD226412 SHD226412R |
HERMETIC POWER MOSFET N-CHANNEL
|
Sensitron
|
| SHD231006 |
HERMETIC POWER MOSFET N-CHANNEL
|
Sensitron
|
|
