| PART |
Description |
Maker |
| N16D1618LPAZ2-75I N16D1618LPA N16D1618LPAC2-10I N1 |
512K 】 16 Bits 】 2 Banks Low Power Synchronous DRAM
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
ETC
|
| IS45S32200C1-7BLA1 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
|
| IS42S32200E-6TL IS42S32200E-6TLI IS45S32200E-6BLA1 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc
|
| IS42S32200C1-6T IS42S32200C1-7BL IS42S32200C1-6BL |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
| W986432DH |
512K ? 4 BANKS ? 32 BITS SDRAM
512K 4 BANKS 32 BITS SDRAM
|
Winbond
|
| 50S116T 50S116T-5 50S116T-6 50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE TECHNOLOGY CO., LTD.
|
| W9816G6IH10 W9816G6IH-6I |
512K × 2 BANKS × 16 BITS SDRAM
1M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO50
|
WINBOND ELECTRONICS CORP
|
| IS42VS16100C1-10T IS42VS16100C1-10TI IS42VS16100C1 |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS42S16100 IS42S16100-7T |
512K Words x 16 Bits x 2 Banks (16-MBIT)
SYNCHRONOUS DYNAMIC RAM
|
ICS
|
