PART |
Description |
Maker |
HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N1 |
From old datasheet system 21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N沟道绝缘栅双极型晶体 21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes 21 A, 1200 V, N-CHANNEL IGBT, TO-263AB
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INTERSIL[Intersil Corporation]
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FDD663710 |
P-Channel PowerTrench? MOSFET -35V, -21A, 18mΩ
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Fairchild Semiconductor
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IRG4PH40UD IRG4PH40UD-E |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A) 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
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International Rectifier, Corp. IRF[International Rectifier]
|
CR-21A |
CR-21A 3PST N.O., Double Break, 5 Amps,440 VAC, 60 Hz, 380 VAC, 50 Hz
|
Tyco Electronics
|
HGT1S5N120BNDS HGT1S5N120BNDS9A |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB 21A, 1200V, NPT Series N-Channel IGBTswith Anti-Parallel Hyperfast Diodes
|
Fairchild Semiconductor
|
1130-4R7M-RC 1130-1R2M-RC 1130-6R8M-RC 1130-100K-R |
RF Choke; Series:1130; Inductance:4.7uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:21A; DC Resistance Max:0.003ohm; Leaded Process Compatible:Yes; Body Material:Ferrite RF Choke; Series:1130; Inductance:1.2uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:21A; DC Resistance Max:0.003ohm; Leaded Process Compatible:Yes; Body Material:Ferrite RF Choke; Series:1130; Inductance:6.8uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:21A; DC Resistance Max:0.004ohm; Leaded Process Compatible:Yes; Body Material:Ferrite High Current Chokes Very high current capacity Fixed lead spacing
|
BOURNS INC Bourns Electronic Solutions
|
BUZ21L BUZ21LE3045 |
N-Channel SIPMOS Power Transistor Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.085 Ohm, 21A, LL SIPMOS Power Transistor
|
Infineon Technologies AG
|
IRFIZ34N IRFIZ34NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Lsolated Base Power HEX-pak Assembly Half Bridge Configuration Power MOSFET(Vdss=55V, Rds(on)=0.04ohm, Id=21A)
|
IRF[International Rectifier]
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OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展|5A条(c)的|园区 TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展| 21A条(c)的|园区 TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五(巴西)国际消费电子展|9A一(c)|园区
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Electronic Theatre Controls, Inc. OKI SEMICONDUCTOR CO., LTD.
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IXTL13N65 IXTH24N45 IXTL18N50 IXTL24N40 IXTH21N45 |
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 13A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-218VAR TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 18A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 24A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 21A I(D) | TO-218VAR 晶体管| MOSFET的| N沟道| 450V五(巴西)直| 21A条(丁)|18VAR TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | TO-3 晶体管| MOSFET的| N沟道|650V五(巴西)直| 18A条(丁)|
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IXYS, Corp.
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