| PART |
Description |
Maker |
| HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N1 |
From old datasheet system
21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21 A, 1200 V, N-CHANNEL IGBT, TO-263AB
|
INTERSIL[Intersil Corporation]
|
| BUZ21 BUZ21SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.085 Ohm, 21A, NL
Power MOSFET, 100V,D²PAK , RDSon=0.085 Ohm, 21A, NL
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| HBO21A-48-12 HBO21A-48-12N |
48Vin 12Vout 21A
|
Broadband TelCom Power, Inc.
|
| ENA1743 |
N-Channel Power MOSFET, 40V, 21A, 28mOhm, Single TP/TP-FA
|
ON Semiconductor
|
| 521Y-481103A |
RF COAXIAL RELAY, SPDT, LATCHED, 0.21A (COIL), 24VDC (COIL), 5040mW (COIL), 40000MHz, 15W (RF INPUT), PANEL MOUNT
|
DOW-KEY MICROWAVE CORP
|
| APT10050LLC APT10050B2LC |
POWER MOS VI 1000V 21A 0.500 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage
|
Advanced Power Technology Ltd.
|
| APT10050B2VR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 21A 0.500 Ohm
|
Advanced Power Technology
|
| APT10045JLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 21A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
| IRFIZ34E IRFIZ34EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
Power MOSFET(Vdss=60V, Rds(on)=0.042ohm, Id=21A)
|
IRF[International Rectifier]
|
| BTS441T BTS441TG BTS441TS Q67060-S6112-A4 Q67060-S |
High Speed CMOS Logic Dual 4-Input NOR Gates 14-SO -55 to 125
Smart High Side Switches - 4,75-41V, 20mΩ 21A TO220
Smart Highside Power Switch One Channel: 20mз
Smart Highside Power Switch One Channel: 20m?/a>
|
INFINEON[Infineon Technologies AG]
|
