| PART |
Description |
Maker |
| 2SD1061 2SB825 2SB825Q |
50V/7A Switching Applications 50V/7A开关应
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-220AB
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SB1268S 2SB1268R 2SB1269Q 2SB1135Q 2SB1269S 2SD19 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-221VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-220
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-220VAR
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis 晶体管|晶体管|叩| 50V五（巴西）总裁| 12A条一（c）|20
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-220VAR 晶体管|晶体管|进步党| 50V五（巴西）总裁| 12A条一（c）|20VAR
|
Sanyo Electric Co., Ltd.
|
| CMBA847G CMBA847E CMBA847F |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 400 - 800 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE.
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23
|
Continental Device India Limited
|
| RA110C RC110C RA113S RC113S RA103S RC103S RA114S R |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-236
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR 晶体管| 50V五（巴西）总裁| 100mA的一（c）|2VAR
|
Amphenol, Corp.
|
| 2SC4211-6 2SC4211-7 2SC4211-5 2SD1913S 2SC4640S 2S |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR 晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一（c）|的SOT - 23VAR
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | TO-92 晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一（c）|92
|
Rohm Co., Ltd.
|
| 2SB826 2SB826R |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-220AB
POWER TRANSISTORS(12A,50V,40W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| D40C4 D45D2 D45D4 D45D6 D40C7 D40K4 D44D5 |
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 500MA I(C) | TO-202AC
TRANSISTOR | BJT | DARLINGTON | PNP | 50V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 70V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 500MA I(C) | TO-202
TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 2A I(C) | TO-202AC
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 6A I(C) | TO-220AB 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 6A条一（c）| TO - 220AB现有
|
Vishay Intertechnology, Inc.
|
| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| 4608H-701-332/472 4608H-701-332/272 4608H-701-332/ |
RC NETWORK, BUSSED, 3300ohm, 50V, 0.0047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.0027uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.000047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.00047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 100000ohm, 50V, 0.015uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 82ohm, 50V, 0.00012uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 82ohm, 50V, 0.00022uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 390000ohm, 50V, 0.027uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 1500ohm, 50V, 0.015uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 10000ohm, 50V, 0.015uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 330ohm, 50V, 0.0001uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 100ohm, 50V, 0.0047uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 33ohm, 50V, 0.000047uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 1200ohm, 50V, 0.047uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 33ohm, 50V, 0.00047uF, THROUGH HOLE MOUNT, SIP-9
Thick Film Resistor Network; Series:4600X; Resistance:22ohm; Resistance Tolerance: 5, - 20%; Power Rating:1.13W; Operating Temperature Range:-55 C to ? C; Resistor Element Material:Thick Film; Voltage Rating:100VDC RoHS Compliant: No
RC NETWORK, BUSSED, 100000ohm, 50V, 0.0039uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 33000ohm, 50V, 0.001uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 15000ohm, 50V, 0.00068uF, THROUGH HOLE MOUNT, SIP-9
RC NETWORK, BUSSED, 15000ohm, 50V, 0.00033uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 100000ohm, 50V, 0.033uF, THROUGH HOLE MOUNT, SIP-9
RC NETWORK, BUSSED, 330ohm, 50V, 0.00033uF, THROUGH HOLE MOUNT, SIP-9
|
Bourns, Inc.
BOURNS INC
|
| DDTA114ECA DDTA115ECA DDTA123ECA DDTA124ECA DDTA14 |
CAP .0082UF 50V PPS FILM 1206 5%
PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR 进步党预偏置信号小的SOT - 23表面贴装晶体
CAP .22UF 50V PPS FILM ECH-S
|
DIODES[Diodes Incorporated]
Diodes, Inc.
Diodes Inc.
|
| ITC1100 |
1000 WATT, 50V, Pulsed Avionics 1030 MHz
Common base bipolar transistor 1000 WATT, 50V, Pulsed
|
List of Unclassifed Manufacturers
ETC
GHz Technology
|
| UMA9N FMA9 FMA9A FMA9N |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-88A
Digital transistor (Common Emitter Dual Transistors)
|
Rohm CO.,LTD.
Microsemi Corporation
ROHM[Rohm]
|
|
