| PART |
Description |
Maker |
| M58LW064 M58LW064BZA M58LW064A M58LW064A150NF1T M5 |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58LW064 M58LW064BT M58LW064A150T6T M58LW064AZA M5 |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories 64兆位x16和x16/x32，块擦除低压闪存
|
意法半导
STMicroelectronics N.V.
|
| M5M29GB320VP-80 |
CMOS Block Erase Flash Memory
|
Renesas
|
| M29W800AB |
8Mbit(1Mbx8 or 512Kbx16, Block Erase) Low Voltage Single Supply Flash Memory(8Mb闪速存储器)
|
意法半导
|
| M25PX32 |
32-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface
|
Numonyx B.V
|
| M25PX64-VMF6TP |
64-Mbit, dual I/O, 4-Kbyte subsector erase, serial flash memory with 75 MHz SPI bus interface
|
Numonyx B.V
|
| M25PX16 M25PX16-VMN6TP M25PX16SOVZM6TP |
16-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface
|
Micron Technology
Numonyx B.V
|
| M25PX64 M25PX64-VME6E M25PX64-VME6F M25PX64-VMF6E |
64-Mbit, dual I/O, 4-Kbyte subsector erase, serial flash memory with 75 MHz SPI bus interface
|
Numonyx B.V
http://
|
| M29W160FBB70NSE M29W320FBB70NSE M29W160FBB70NSF M2 |
16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| M5M29GB160BVP M5M29GB160BVP-80 M5M29GT160BVP M5M29 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
From old datasheet system
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M29KB_T331AVP M5M29KB M5M29KB/T331AVP M5M29KB331 |
Memory>NOR type Flash Memory
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Renesas Electronics Corporation.
|
