| PART |
Description |
Maker |
| CY7C1515AV18-200BZXI CY7C1526AV18-278BZXC CY7C1526 |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165
8M X 9 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1514V18 CY7C1514V18-200BZC CY7C1514V18-250BZC |
72-Mbit QDR-II?SRAM 2-Word Burst Architecture
72-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture
72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
72-MBIT QDR-II⒙ SRAM 2-WORD BURST ARCHITECTURE
72-Mbit QDR-II SRAM 2-Word Burst Architecture
|
CYPRESS[Cypress Semiconductor]
|
| CY7C1163V18-400BZC |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| R1Q4A3609ABG40RS0 R1Q6A3609ABG40RS0 R1Q3A3609ABG40 |
1M X 36 QDR SRAM, PBGA165
1M X 36 QDR SRAM, 0.45 ns, PBGA165
36-Mbit QDR?II SRAM 2-word Burst
36-Mbit QDR?⑸I SRAM 2-word Burst
36-Mbit QDR垄芒II SRAM 2-word Burst
|
http://
Renesas Electronics Corporation
|
| CY7C1425AV18 CY7C1414AV18-167BZI CY7C1414AV18-167B |
36-Mbit QDR-II SRAM 2-Word Burst Architecture
36-Mb QDR-II SRAM2-Word Burst结构36-Mb QDR-II SRAM2-Word Burst结构 36 - MB的QDR - II型的SRAM2字突发结构）6 - MB的QDR - II型的SRAM2字突发结构）
|
Cypress Semiconductor Corp.
|
| CY7C1412BV18-167BZXI CY7C1414BV18-167BZXI |
36-Mbit QDR-IISRAM 2-Word Burst Architecture 1M X 36 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| Y5-12-12 Y5-12-15 Y5-12-5 Y5-12S15 Y5-12S5 |
72-Mbit QDR-II™ SRAM 2-Word Burst Architecture
256K (32K x 8) Static RAM
16K/32K/64K/128K x 9 Low-Voltage Deep Sync™ FIFOs 模拟IC
72-Mbit QDR-II™ SRAM 2-Word Burst Architecture
USB LOW SPEED, 3 ENDPOINT, ENCORE II, 16-SOIC
|
东电?中国)投资有限公司
|
| CY7C1292DV18-200BZXC CY7C1292DV18-167BZXC CY7C1294 |
9-Mbit QDR- IISRAM 2-Word Burst Architecture 512K X 18 QDR SRAM, 0.45 ns, PBGA165
9-Mbit QDR- IISRAM 2-Word Burst Architecture 512K X 18 QDR SRAM, 0.5 ns, PBGA165
9-Mbit QDR- IISRAM 2-Word Burst Architecture 256K X 36 QDR SRAM, 0.5 ns, PBGA165
9-Mbit QDR- IISRAM 2-Word Burst Architecture 256K X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1413BV18-300BZXC CY7C1413BV18-300BZXI CY7C1413 |
36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture
36-Mbit QDR??II SRAM 4-Word Burst Architecture
36-Mbit QDR?II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor
|
| CYRS1542AV18 |
72-Mbit QDR? II SRAM Two-Word Burst
|
Cypress Semiconductor
|
