| PART |
Description |
Maker |
| EUP3595QIR1 EUP3595JIR1 EUP3595 |
512K x 32, 3.3V, MCM, Async
CMOS 5.0V, High Speed Static RAM
512K x 32, 5V, MCM, Rad Tol, Async
Parallel White-LED Driver
|
德信科技股份有限公司
Eutech Microelectronics Inc
|
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| LCL2603-L LCL3503-L |
MCM LNA
|
RFHIC
|
| LCL1503-L |
MCM LNA
|
RFHIC
|
| LCL2302-L LCL2702-L |
MCM LNA
|
RFHIC
|
| LCL1903-L |
MCM LNA
|
RFHIC
|
| 5962-01533 UT8Q512K32-SWC 8Q512K32 UT8Q512K32 UT8Q |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
16Megabit SRAM MCM 16Megabit的SRAM亿立方米
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none.
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
|
Aeroflex Circuit Techno...
http://
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
|
| 89C1632RPQI25 89C1632RPQI30 89C1632RPQK20 89C1632R |
16 Mbit (512K x 32-bit) MCM SRAM
|
Maxwell Technologies
|
| 79C2040RPFK-20 79C2040 79C2040RPFE-15 79C2040RPFE- |
20 Megabit (512K x 40-Bit) EEPROM MCM
|
MAXWELL[Maxwell Technologies]
|
| GBM2121-L GBM9021-L |
MCM Linear High Gain Linearity Module
|
RFHIC
|
| GVT71256D36B-5 GVT71256D36T-5 GVT71256D36T-4.4 GVT |
256K x 36 pipelined SRAM, 200MHz
256K x 36 pipelined SRAM, 225MHz
256K x 36 pipelined SRAM, 150MHz
256K x 36 pipelined SRAM, 166MHz
512K x 18 pipelined SRAM, 225MHz
512K x 18 pipelined SRAM, 150MHz
512K x 18 pipelined SRAM, 166MHz
512K x 18 pipelined SRAM, 200MHz
|
Cypress
|
