| PART |
Description |
Maker |
| W9864G6IH W9864G6IH-7 W9864G6IH-7S W9864G6IH-5 W98 |
1M × 4BANKS × 16BITS SDRAM
|
Winbond
http://
|
| IS43LR16800F-6BLI |
2M x 16Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solution...
|
| TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM)
8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM)
4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM）的
16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| HY5S6B6DLF-BE HY5S6B6DLF-SE HY5S6B6DLFP-BE HY5S6B6 |
4Banks x1M x 16bits Synchronous DRAM
|
HYNIX[Hynix Semiconductor]
|
| HY5Y6B6DLF-HF HY5Y6B6DLF-PF HY5Y6B6DLFP-HF HY5Y6B6 |
4Banks x1M x 16bits Synchronous DRAM
|
Hynix Semiconductor
|
| IS42VM16400G |
1M x 16Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| IS42SM16400G |
1M x 16Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| T436416D-5CG T436416D-5S T436416D-5SG T436416D-6SG |
4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|
| T436432B-7S T436432B-7SG T436432B-55SG T436432B-6S |
2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM 200万32内存12k × 32 x 4Banks同步DRAM
|
TM Technology, Inc.
|
| M366S0824DT0 M366S1623DT0 |
8M x 64 SDRAM DIMM based on 4M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
16M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
