| PART |
Description |
Maker |
| CM400HG-66H |
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| 2SC5439 EE08313 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTA SWITCHINGM DC-DC CONVERTER, INVERTER LIGHTING APPLICATIONS) npn型三重扩散型（开关稳压器，高沃尔SWITCHINGM的DC - DC转换器，逆变照明应用
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR HIGH VOLTA SWITCHINGM DC-DC CONVERTER INVERTER LIGHTING APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| CM1200HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM600DY-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM400DY-66H |
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
|
Mitsubishi Electric Semiconductor
|
| CM600HB-90H |
Single IGBTMOD?/a> HVIGBT 600 Amperes/4500 Volts
Single IGBTMOD⑩ HVIGBT 600 Amperes/4500 Volts
Single IGBTMOD HVIGBT 600 Amperes/4500 Volts
Single IGBTMODHVIGBT 600 Amperes/4500 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM600HG-130H |
Single IGBTMOD HVIGBT Module 600 Amperes/6500 Volts
|
Powerex Power Semiconductor...
|
| CM1800HCB-34N |
Single IGBTMOD HVIGBT Module 1800 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| QID4515002 |
Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts
|
Powerex Power Semiconductors
|
| QID4515001 |
Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts
|
Powerex Power Semiconductors
|
| QID3310006 |
Dual IGBT HVIGBT Module 100 Amperes/3300 Volts
|
Powerex Power Semicondu...
|
