| PART |
Description |
Maker |
| K7N803601B K7N803649B-QC25 DS_K7N803601B K7M801825 |
512Kx36 & 1Mx18 Pipelined NtRAM
256Kx36 & 512Kx18-Bit Flow Through NtRAM
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5R; Tolerance, resistance:20%; Beta value:2800; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes
256Kx36 & 512Kx18-Bit Pipelined NtRAM 256Kx36
|
http://
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7M801825B K7M803625B06 |
256Kx36 & 512Kx18 Flow-Through NtRAM
|
Samsung semiconductor
|
| CY7C1355V25 CY7C1357V25 7C1355V |
256Kx36/512Kx18 Flow-Thru SRAM with NoBL Architecture
From old datasheet system
|
Cypress
|
| K7B803625M K7B801825M |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
| KM718V987 KM736V887 |
256KX36 & 512KX18 SYNCHRONOUS SRAM
|
Samsung Electronic
Samsung semiconductor
|
| K7N801845B K7N803645B DSK7N803645B K7N803649B-QC25 |
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7P803666B K7P801866B |
256Kx36 AND 512Kx18 Synchronous Pipelined SRAM
|
SAMSUNG[Samsung semiconductor]
|
| CY7C1354V25 CY7C1356V25 7C1354V |
256Kx36/512Kx18 Pipelined SRAM with NoBL Architecture
From old datasheet system
|
Cypress
|
| K7A403200B K7A403200B-QC K7A403201B K7A403201B-QC |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 16299 16299-A |
Slim Power Relay, 1 Form A, 6A 250VAC, Silver Alloy Contact
HTSNK, C X-FLOW, .4H LOW FLOW, THREADED
HTSNK C X-FLOW .4H LOW FLOW THREADED
|
VICOR[Vicor Corporation]
|
| EG1126 |
Integrated Flow Function, Off-LIne Flow Model PWM controller
|
Jingjing Microelectroni...
|
| CY7C1475V33-133BGXI CY7C1475V33-133BGI CY7C1475V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构B>72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL?/a> Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL垄芒 Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
