| PART |
Description |
Maker |
| 2SK3524 |
N-CHANNE SILLCON POWER MOSFET
N-CHANNE SILLCON POWER MOSFET - CHANNE SILLCON功率MOSFET
|
Fuji Electric
Electronic Theatre Controls, Inc.
|
| IRF450 IRF451 IRF452 IRF252 IRF250 IRF251 |
N-CHANNE POWER MOSFETS
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| CE2766 |
6-Channe Audio DAC
|
CEI
|
| FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 100V的五（巴西）直| 20A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 150伏五（巴西）直| 3A条（丁）| TO - 220AB现有
|
Cooper Bussmann, Inc.
|
| DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五（巴西）直| 5A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五（巴西）直| 35A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd.
Glenair, Inc.
|
| 2SK2432 2SK2619 2SK2636 2SK2403 2SJ454 2SK2404 2SK |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 7A I(D)
TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 5A I(D)
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 16A I(D) 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 16A条（丁）
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 6A I(D) | TO-262AA 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 6A条（丁）|62AA
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 20A I(D) 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 20A条（丁）
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
Sanyo Electric Co., Ltd.
|
| 2SJ404 2SJ405 2SK2163 |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6A I(D) | TO-220AB
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | TO-220VAR 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 40A条（丁）|20VAR
|
EPCOS AG
|
| IRFU214A IRFR214A |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-251AA
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 2.2AI（四）|52AA
|
Intersil, Corp.
|
| IRFPG22 IRFPE32 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 1.5A I(D) | TO-247AC
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.4A I(D) | TO-247AC 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 3.4AI（四）|47AC
|
Fairchild Semiconductor, Corp.
|
| STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB
N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET
N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
|
| 2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 |
High Frequency/General Purpose
N-Channel JFETs
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
|
Vishay Siliconix
Vishay Intertechnology,Inc.
|
