| PART |
Description |
Maker |
| M48Z512Y-120PL1NBSP M48Z512Y-120PL1 |
NVRAM (Battery Based)
From old datasheet system
|
ST Microelectronics
|
| DS1230AB-150-IND DS1230Y-150-IND DS1230Y-70-IND DS |
NVRAM (Battery Based) NVRAM中（基于电池
|
Epson ToYoCom, Corp.
Maxim Integrated Products, Inc.
|
| DS1245Y-100-IND DS1245Y-120-IND DS1245YP-70 DS1245 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1745Y-150-IND DS1745YLPM-150-IND |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1225Y DS1225Y-170 |
NVRAM (Battery Based) NVRAM中（基于电池
64K Nonvolatile SRAM
IC,NOVRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| STK12C68-5S30 STK12C68-5W30 |
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:35mA
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| ST19SF02 |
CMOS MCU BASED SAFEGUARDED SMARTCARD WITH 2, 4, 8, OR 16KBYTES EEPROM
Smartcard MCU With 2 KBytes of EEPROM
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M41ST87W11 M41ST87WSS6F |
Serial real-time clock (RTC) supervisor
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
ST Microelectronics
STMicroelectronics
|
| ST19SF08TIBC3W40 |
CMOS MCU Based Safeguarded Smartcard With 8 KBytes EEPROM
|
ST Microelectronics
|
| ANT3-M24LR-A |
SMD-inductor based antenna reference board for the M24LR64-R Dual Interface EEPROM
|
STMicroelectronics
|
