| PART |
Description |
Maker |
| A29DL323 A29DL323TG-90 A29DL323TV-90 A29DL323UG-90 |
32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
|
AMICC[AMIC Technology]
|
| MC68010P8 MC68EC000FU8 |
Microprocessor, 16-/ 32-bit data and address registers, 16-Mbyte direct addressing range, memory-mapped input/output (I/O), 14 addressing modes, 8MHz
|
Motorola
|
| UPD23C32380GZ-MJH UPD23C32340GZ-MJH UPD23C32340F9- |
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE 32兆位掩膜可编程ROM的分位（字节模式 200万字6位（字模式）页面访问模式
CAP 3PF 16V /-0.1PF THIN-FILM SN90/PB10/NI 30PPM TR-7-PA
|
http://
NEC, Corp.
NEC Corp.
|
| NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，4千兆位，8千兆112 Byte/1056字的页面.8V/3V，NAND闪存
|
STMicroelectronics N.V.
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| XR16C850 XR16C850CQ XR16C850CJ XR16C850CM XR16C850 |
UART with 128-byte FIFO’s FIFO Counters and Half-duplex Control
UART with 128-byte FIFOs FIFO Counters and Half-duplex Control
|
EXAR[Exar Corporation]
|
| 16C2850 XR16C2850CP XR16C2850CM XR16C2850IP XR16C2 |
DUAL UART WITH 128-byte FIFOs AND RS-485 HALF DUPLEX CONTROL
|
Exar
|
| MC-4R512FKE6D MC-4R512FKE6D-653 MC-4R512FKE6D-745 |
Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MC-4R128FKE8D-845 MC-4R128FKE8D MC-4R128FKE8D-653 |
Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 18-BIT)
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MC-4R128FKE8D-840 |
Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 18-BIT)
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
