| PART |
Description |
Maker |
| M36W0R6040B3ZAQE M36W0R6050B3 M36W0R6050B3ZAQE M36 |
64-Mbit (4 Mbits ×16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
http://
|
| M36L0T8060B1 |
(M36L0T8060B1 / M36L0T8060T1) 256 Mbit Flash memory and 64 Mbit PSRAM
|
ST Microelectronics
|
| M36W0R604040B0ZAQE M36W0R604040B0ZAQF M36W0R604040 |
64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 】16) PSRAM, multi-chip package
|
Numonyx B.V
|
| AT52BC1661A-70CI AT52BC1661AT-70CI |
16-Mbit Flash 8-Mbit PSRAM Stack Memory 16 - Mbit闪存8兆移动存储芯片堆栈内
|
Atmel Corp.
Atmel, Corp.
|
| M36LLR8760 M36L0R7050 M36L0R7050B0ZAQE M36L0R7050B |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package 128兆位（多银行，多层次，突发）闪存32兆位00万16）移动存储芯片，1.8V电源多芯片封
CAP 2.2PF 200V 0.5PF C0H DIP-2 BULK S-MIL-C-39014
ER 23C 16 12 8 4 SKT RECP WALL
CAP 0.1UF 50V 10% X7R DIP-2 BULK P-MIL-C-39014
128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32 Mbit (2M x16) PSRAM
From old datasheet system
|
STMicroelectronics N.V.
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| M36L0R8060T0 M36L0R8060B0 M36L0R8060 |
256 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 64 Mbit (Burst) PSRAM
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M36D0R6040T0ZAIT M36D0R6040B0ZAI M36D0R6040B0ZAIE |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| SST39LF016 SST39LF016-90-4I-EI SST39VF016-90-4I-EI |
(SST39VF080 / SST39VF016 / SST39LF080 / SST39LF016) 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
7.6 mm(0.3 inch) Micro Bright Seven Segment Displays
CONNECTOR ACCESSORY
LED Light Bars
D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL 2M X 8 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PDSO40
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 70 ns, PDSO40
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| M36LLR8760B1 M36LLR8760M1 M36LLR8760TT M36LLR8760D |
256 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
意法半导
STMicroelectronics
ST Microelectronics
|
| M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMicroelectronics
|
| SST34HF3282 |
(SST34HF3244 - SST34HF3284) 32 Mbit Concurrent SuperFlash 4/8 Mbit PSRAM ComboMemory
|
SST
|
| SST34HF32A4-70-4E-LSE SST34HF32A4 SST34HF32A4-70-4 |
32 Mbit Concurrent SuperFlash 16 Mbit PSRAM ComboMemory
|
SST[Silicon Storage Technology, Inc]
|
