| PART |
Description |
Maker |
| K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0 |
From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory
|
Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
|
| K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AT49F512-70TC AT49F512 AT49F512-70VC AT49F512-70VI |
Quadruple 2-Input Positive-NAND Gate 14-SOIC -40 to 125 64K X 8 FLASH 5V PROM, 90 ns, PDSO32
Quadruple 2-Input Positive-NAND Gate 14-SSOP -40 to 125 64K X 8 FLASH 5V PROM, 90 ns, PDIP32
512K 64K x 8 5-volt Only Flash Memory
|
Atmel, Corp.
PROM
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| HY27UG088G5B HY27UG088GDB HY27UG088G5B-TIP |
8Gb NAND FLASH
FLASH 3.3V PROM, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, PLASTIC, TSOP1-48
|
Hynix Semiconductor, Inc.
|
| HY27UA081G1M HY27SA1G1M HY27SA161G1M-TPCB |
(HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
64M X 16 FLASH 1.8V PROM, 12000 ns, PDSO48
|
Hynix Semiconductor Inc.
|
| K9F8008W0M- K9F8008W0M-TCB0 K9F8008W0M-TIB0 K9K120 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
1M x 8 bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| LPC3230FET296 |
ARM926EJ-S with 256 kB SRAM, USB High-speed OTG, SD-MMC, NAND flash controller, LCD controller 32-BIT, FLASH, 266 MHz, RISC MICROCONTROLLER, PBGA296
|
NXP Semiconductors N.V.
|
| TC58DVM72A1FTI |
Flash - NAND
|
TOSHIBA
|
| TC58DVM82A1FT TC58DVM82F1FT |
Flash - NAND
|
TOSHIBA
|
| MT29F1G16ABCHC MT29F1G08ABCH4 |
NAND Flash Memory
|
Micron Technology
|
| MT29F2G08AACWP MT29F4G08BACWP MT29F8G08FACWP |
NAND Flash Memory
|
Micron Technology
|
