PART |
Description |
Maker |
K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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IS62C1024-35Q IS62C1024-35QI IS62C1024 16_62C1024 |
70ns; 5V; 128K x 8 high-speed CMOS static RAM Micro LED; LED Color:Red Orange; Luminous Intensity:80ucd; Viewing Angle:140 ; Forward Voltage:2.2V; Color:Red/Orange; Package/Case:1210; Reel Quantity:3000; Wavelength:630nm RoHS Compliant: Yes 128K的8高速CMOS静态RAM 128K x 8 HIGH-SPEED CMOS STATIC RAM 128K的8高速CMOS静态RAM From old datasheet system ASYNCHRONOUS STATIC RAM 128K x 8 HIGH-SPEED CMOS STATIC RAM
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Advanced Interconnections, Corp. SIEMENS AG Integrated Silicon Solution, Inc. ICSI[Integrated Circuit Solution Inc] Integrated Circuit Solu...
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CXK77B3610GB- CXK77B3610GB-6 CXK77B3610GB-7 CXK77B |
High Speed 1MBit Bi-CMOS Synchronous Static RAM(高M位Bi-CMOS同步静态RAM) High Speed Bi-CMOS Synchronous Static RAM From old datasheet system
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SONY[Sony Corporation]
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KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 |
32Kx8 bit high speed static RAM (5V operating), 20ns 32Kx8 bit high speed static RAM (5V operating), 15ns 32Kx8 bit high speed static RAM (5V operating), 12ns 32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作(,进化引脚了。在商业温度范围工作
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Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
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IS61LV12824-8TQ IS61LV12824 IS61LV12824-10B IS61LV |
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K的24 HIGH-SPEED的CMOS静态RAM.3V电源 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PQFP100 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PBGA119 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PBGA119 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PQFP100
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天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution Inc
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EDI8L32128V12AC EDI8L32128V12AI EDI8L32128V15AC ED |
12ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM 15ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM 20ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
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White Electronic Designs
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EDI8F321024C15MZC EDI8F321024C20MZC EDI8F321024C25 |
15ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module 20ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module 25ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module
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White Electronic Designs
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K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位(与OE)的高速CMOS静态RAM.0V操作) 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位(与OE)的高速CMOS静RAM.0V操作)
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存(5V工作),旋转引脚输出。在商用和工业温度范围操 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128K x 8 high speed static RAM, 5V operating, 20ns 128K x 8 high speed static RAM, 5V operating, 15ns
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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