PART |
Description |
Maker |
R1LV0416CBG-5SI R1LV0416CBG-7LI R1LV0416CBG-I |
Memory>Low Power SRAM Wide Temperature Range Version 4M SRAM (256-kword 】 16-bit) Wide Temperature Range Version 4M SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
R1RP0408DGE-2PI R1RP0408DI |
Memory>Fast SRAM>Asynchronous SRAM Wide Temperature Range Version 4M High Speed SRAM (512-kword 】 8-bit) Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit)
|
Renesas Electronics Corporation
|
R1LV0408CSA-5SI |
Wide Temperature Range Version 4M SRAM (512-kword 8-bit)
|
Hitachi Semiconductor
|
R1RP0416DI-15 |
Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
HM628512CI HM628512CLFPI-7 HM628512CLPI-7 HM628512 |
Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit) 宽温版本四米的SRAM12 - KWord的8位) Single Ic = 100 mA
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
HM62W16255CJPI12 |
Wide Temperature Range Version 4M High Speed SRAM (256-kword 16-bit) 宽温版本4分高速SRAM56 - KWord的?16位)
|
Hitachi,Ltd.
|
HM62V16100I HM62V16100LBPI-4 HM62V16100LBPI-4SL HM |
Memory>Low Power SRAM Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
|
HITACHI[Hitachi Semiconductor] Renesas Electronics Corporation
|
R1LV1616HSA-4LI R1LV1616HSA-4SI R1LV1616H-I R1LV16 |
Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit)
|
Renesas Electronics Corporation
|
HN58V66AI HN58V65API-10 HN58V65API-10E HN58V65AT-1 |
Memory>EEPROM>Parallel EEPROM 64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version
|
RENESAS[Renesas Electronics Corporation]
|
HFTV1108GS-TR |
Wide temperature range
|
STANLEY ELECTRIC CO.,LT...
|