PART |
Description |
Maker |
E2EQ-X15X1 E2EQ-X15X1-M1J E2EQ-X7D1-M1GJ XS2F-D422 |
A Series of Spatter-resistant Proximity Sensors with a Teflon-coated Metal Housing
|
Omron Electronics LLC
|
Q604013ABI Q604013ABICC Q604013PCIQRCCR Q604013PCI |
Body is impact-resistant polycarbonate for PCI series and ABS for ABI series Body is impact-resistant polycarbonate for PCI series and ABS for ABI series
|
List of Unclassifed Man...
|
FSJ264R4 FSJ264D1 FSJ264D3 FSJ264R FSJ264R1 FSJ264 |
33A/ 250V/ 0.080 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:10; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:6; Connector Shell Size:14S; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射,抗SEGR N沟道功率MOSFET Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
FSS230R FSS230D FN4054 FSS230R4 FSS230D1 FSS230D3 |
RC NETWORK 220 OHM/100PF 5% SMD 8 A, 200 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs From old datasheet system 8A,200V,0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
MPXHZ6115A MPXHZ6115AC6U MPXAZ6115A MPXAZ6115A6T1 |
Media Resistant and High Temperature Accuracy Integrated Pressure Sensor Media Resistant and High Temperature Accuracy Integrated Silicon Pressure Sensor CAP 68UF 6V 20% TANT SMD-6032-28 TR-7
|
Freescale (Motorola) MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] Motorola, Inc.
|
FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R FSTY |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs From old datasheet system
|
INTERSIL[Intersil Corporation]
|
FSR1110R FSR1110D FN4828 FSR1110R4 FSR1110D1 FSR11 |
From old datasheet system Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
FSYA150R4 FSYA150D FSYA150D1 FSYA150D3 FSYA150R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 39 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
G6A-274P-ST |
Resistant to electromagnetic interference
|
Omron Electronics LLC
|
K52-2 K52-3 K52-1 |
Resistant to tears and cut through
|
Laird Tech Smart Techno...
|