| PART |
Description |
Maker |
| EDS6416AHBH-75-E EDS6416CHBH-75-E |
64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位）
|
Elpida Memory, Inc.
|
| EBE41RE4AAHA-5C-E EBE41RE4AAHA EBE41RE4AAHA-4A-E |
4GB Registered DDR2 SDRAM DIMM (512M words x 72 bits, 2 Ranks)
|
ELPIDA[Elpida Memory]
|
| EDS2532EEBH-9A EDS2532EEBH-9A-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
|
Elpida Memory, Inc.
|
| EBE52UD6ABSA EBE52UD6ABSA-5C-E EBE52UD6ABSA-4A-E |
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 512MB的DDR2 SDRAM内存的SO - DIMM400字64位，2个等级）
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 64M X 64 DDR DRAM MODULE, 0.6 ns, DMA240
|
Elpida Memory, Inc.
|
| LC321664AJ LC321664AM LC321664AT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
SANYO[Sanyo Semicon Device]
|
| LC321667BJ LC321667BM LC321667BT-70 LC321667BT-80 |
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode / Byte Write
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode, Byte Write???
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| K4C89323AF-GCFB K4C89323AF-TCF6 K4C89323AF-TCF5 K4 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EDE2108ABSE EDE2108ABSE-5C-E EDE2108ABSE-6E-E EDE2 |
2G bits DDR2 SDRAM 512M X 4 DDR DRAM, 0.45 ns, PBGA68
2G bits DDR2 SDRAM 256M X 8 DDR DRAM, 0.4 ns, PBGA68
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
|
| MSM54V12222A |
From old datasheet system
262214 Words x 12 Bits FIELD MEMORY
262,214 WORDS X 12 BITS FIELD MEMORY
|
OKI[OKI electronic componets]
|
| EDS2516APSA-75 EDS2508APSA-75 EDS2508APSA-75L EDS2 |
256M bits SDRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
256M bits SDRAM 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
|
http://
Elpida Memory, Inc.
|
