| PART |
Description |
Maker |
| PMB2331 |
The mixer used in this design is a general purpose up-/downconversion gilbert cell mixer
|
SIEMENS AG
|
| HSMS-8202-TR2G HSMS-8209-TR2G HSMS-8202-BLKG |
SILICON, KU BAND, MIXER DIODE
Surface Mount Microwave Schottky Mixer Diodes
|
AVAGO TECHNOLOGIES LIMITED
|
| AD8342ACPZ-R2 AD8342-15 |
Active Receive Mixer LF to 500 MHz 50 MHz - 2400 MHz RF/MICROWAVE DOUBLE BALANCED MIXER
Active Receive Mixer LF to 3 GHz
|
Analog Devices, Inc.
|
| LAVI-9VH |
Frequency Mixer 820 MHz - 870 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 8.5 dB CONVERSION LOSS-MAX
|
Mini-Circuits
|
| LAVI-2VH |
Frequency Mixer 2 MHz - 1100 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 9.5 dB CONVERSION LOSS-MAX
|
Mini-Circuits
|
| XM1003-BD-000V XM1003-BD-EV1 |
32.0-42.0 GHz GaAs MMIC Image Reject Mixer 32000 MHz - 42000 MHz RF/MICROWAVE IMAGE REJECTION MIXER
|
Mimix Broadband, Inc.
|
| XM1001-QH-0G0T XM1001-QH-0G00 XM1001-QH-EV1 |
10.0-34.0 GHz Image Reject Mixer QFN, 4x4 mm 10000 MHz - 33000 MHz RF/MICROWAVE IMAGE REJECTION MIXER
10.0-34.0 GHz Image Reject Mixer QFN, 4x4 mm 10.0-34.0 GHz的图像抑制混频器QFN封装 × 4
|
Mimix Broadband, Inc.
|
| HSB88WS |
Schottky Barrier Diodes for Detection and Mixer
Silicon Schottky Barrier Diode for Balanced Mixer
|
HITACHI[Hitachi Semiconductor]
|
| 1N415GM 1N21WG 1N416G 1N415H |
Diode RF Mixer PN Mixer
|
New Jersey Semiconductor
|
| PT2390 PT2390-S |
Echo IC with Built in Michrophone Amplifier and Output Mixer
Echo IC with Built-in Microphone Amplifier & Output Mixer
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3711Z with Lead Free Packaging
|
Princeton Technology Co...
Princeton Technology Corporation
PTC
|
