PART |
Description |
Maker |
29F002 MX29F002BQI-12 MX29F002NBQI-12 MX29F002TPI- |
DIODE SCHOTTKY 15V 2X20A TO247AD DIODE SCHOTTKY 45V 2X20A TO247AD MOSFET N-CH 500V 14A TO-247AD Low Cost Precision Difet Operational Amplifier 8-SOIC 0 to 70 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDIP32 IC MOSFET DRIVER LS 4A DUAL 8DIP 256K X 8 FLASH 5V PROM, 90 ns, PQCC32 MOSFET N-CH 500V 20A TO-247AD 256K X 8 FLASH 5V PROM, 70 ns, PQCC32 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDSO32 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDIP32 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
29F002B-90 29F002T-12 29F002T-55 29F002T-90 29F002 |
2M-BIT [256K x 8] CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PDIP32
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
PDM41028LA10TSOITR PDM41028LA10SOITR PDM41028LA12S |
1 Megabit Static RAM 256K x 4-Bit 1兆位静RAM 256K × 4 1 Megabit Static RAM 256K x 4-Bit 1兆位静态RAM 256K × 4
|
Electronic Theatre Controls, Inc.
|
KM41256AJ-12 KM41257AJ-12 KM41256AJ-10 KM41257AJ-1 |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode 256K × 1位动态随机存储器与页/半字节模
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MX27C256 MX27C256PC-10 MX27C256PC-12 MX27C256PC-15 |
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDSO28 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PQCC32 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PDIP28 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 100 ns, PDIP28 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 120 ns, PDIP28 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 150 ns, PDIP28 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 90 ns, PDIP28 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28
|
PROM Macronix International Co., Ltd.
|
NM27C240 NM27C240QE120 |
4 Meg (256K x 16) High Performance CMOS EPROM [Life-time buy] 4,194,304-Bit (256k x 16) High Performance CMOS EPROM 4 /194 /304-Bit (256k x 16) High Performance CMOS EPROM 4,194,304位(256k × 16)高性能的CMOS存储
|
FAIRCHILD[Fairchild Semiconductor]
|
HYB314171BJL-70 HYB314171BJL-60 HYB314171BJL-50 HY |
256k x 16 Bit FPM DRAM 3.3 V 60 ns -3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh 256k x 16 Bit FPM DRAM 3.3 V 70 ns From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
AT49BV4096A AT49BV4096A-12RC AT49BV4096A-12RI AT49 |
LM4250 Programmable Operational Amplifier; Package: SOIC NARROW; No of Pins: 8 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO40 LM4308 Mobile Pixel Link Two (MPL-2) - 18-bit CPU Display Interface Master/Slave; Package: MICRO-ARRAY; No of Pins: 49 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO40 4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO48
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
MCM40256 MCM40256S10 MCM40256S70 MCM40256S80 MCM40 |
256K x 40 Bit Dynamic Random Access Memory Module 256K X 40 FAST PAGE DRAM MODULE, 70 ns, SMA72
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
K3N3C6000D-DC K3N3C6000D-DC10 |
256K X 16 MASK PROM, 100 ns, PDIP40 4M-Bit (256K x 16) CMOS MASK ROM(EPROM TYPE) Data Sheet
|
Samsung Electronic
|
KM616U4000BZ |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|