| PART |
Description |
Maker |
| AT27LV010A-70JI AT27LV010A-70JU AT27LV010A-70TI AT |
1-Megabit (128K x 8) Low Voltage OTP EPROM
|
ATMEL Corporation
|
| AM27X010 AM27X010-120JC AM27X010-120JI AM27X010-12 |
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 250 ns, PDIP32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 90 ns, PDIP32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 55 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 120 ns, PDIP32
CABLE TIE BARB TY 120LB 18.1,1
|
PROM
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
ADVANCED MICRO DEVICES INC
|
| AT29BV010A AT29BV010A-20 AT29BV010A-20JC AT29BV010 |
1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash
|
ATMEL[ATMEL Corporation]
|
| AT49HLV010 AT49HLV010-55JC AT49HLV010-55JI AT49HLV |
1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
|
ATMEL Corporation
|
| AT49BV-LV001 |
1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
|
Atmel Corp.
|
| KM68FS1000 KM68FR1000 |
128K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 8位超低功耗和低电压CMOS 静RAM) 128K的x8位超低功耗和低电压的CMOS全静态RAM28K的8位超低功耗和低电压的CMOS静态RAM）的
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| AT28C01006 AT28C010 AT28C010E-15JI AT28C010E-15PI |
128K X 8 EEPROM 5V, 150 ns, PDIP32
120NS, TSOP, IND TEMP, GREEN(EEPROM) 128K X 8 EEPROM 5V, 120 ns, PDIP32
1-megabit (128K x 8) Paged Parallel EEPROM
|
Atmel, Corp.
ATMEL Corporation
|
| AT49F2048 AT49F2048-12RC AT49F2048-12RI AT49F2048- |
2-Megabit 128K x 16 5-volt Only CMOS Flash Memory 128K X 16 FLASH 5V PROM, 120 ns, PDSO44
Serial-To-Parallel Interface 20-TSSOP -40 to 85 128K X 16 FLASH 5V PROM, 70 ns, PDSO44
Dual 16-Bit Binary Counters with 3-State Output Registers 20-PDIP -40 to 85
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| NM27LV010 NM27LV010V250 NM27LV010TE250 NM27LV010VE |
1,048,576-Bit (128k x 8) Low Voltage EPROM
1048576-Bit (128k x 8) Low Voltage EPROM
|
FAIRCHILD[Fairchild Semiconductor]
|
| 28LV010RPDE-25 28LV010RT1DE-25 28LV010RT2DE-25 28L |
3.3V 1 Megabit (128K x 8-Bit) EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DIP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM
CAP-ARR 200PF X4 100V 10% NP0(C0G) SMD-0508 PLATED-NI/SN TR-7 1K/REEL
CAP ARRAY, 2 X 10NF 50V 0508X7RCAP ARRAY, 2 X 10NF 50V 0508X7R; Capacitance:10nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 22NF 16V 0405X5RCAP ARRAY, 2 X 22NF 16V 0405X5R; Capacitance:22nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:85(degree C);
CAP ARRAY, 2 X 15PF 50V 0405NPOCAP ARRAY, 2 X 15PF 50V 0405NPO; Capacitance:0.015nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 680PF 50V 0405NPOCAP ARRAY, 2 X 680PF 50V 0405NPO; Capacitance:0.68nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 4 X 100PF 50V 0508NPOCAP ARRAY, 4 X 100PF 50V 0508NPO; Capacitance:0.1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 10NF 16V 0405X7RCAP ARRAY, 2 X 10NF 16V 0405X7R; Capacitance:10nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:125(degree C);
Ceramic Capacitor Array; Capacitor Type:Chip Array; Capacitance:22pF; Capacitance Tolerance: /- 10%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0405; Termination:SMD RoHS Compliant: Yes
CAP ARRAY, 2 X 1000PF 50V 0405X7RCAP ARRAY, 2 X 1000PF 50V 0405X7R; Capacitance:1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
|
Maxwell Technologies, Inc
|
| 28C011TRT2F 28C011TRT2FB 28C011TRT2FE 28C011TRT2FI |
1 megabit (128K x 8-bit) - EEPROM
1 Megabit (128K x 8-Bit) EEPROM
|
Maxwell Technologies
ETC
|
|
