| PART |
Description |
Maker |
| ISL9R460PF2 ISL9R460PF2NL |
4A, 600V Stealth ™, Diode, TO-220F Package
4A, 600V Stealth Diode
From old datasheet system
4A / 600V Stealth Diode
|
Fairchild Semiconductor
|
| ISL9860PF2 ISL9R860PF2 SAMSUNGSEMICONDUCTORCO.LTD. |
8A, 600V Stealth⑩ Diode
8A 600V Stealth Diode
8A, 600V Stealth Diode 8A条，600V的隐形二极管
|
FAIRCHILD[Fairchild Semiconductor]
SAMSUNG[Samsung semiconductor]
Fairchild Semiconductor Corporation
SAMSUNG SEMICONDUCTOR CO. LTD.
Fairchild Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
|
| FFPF60SA60DS FFPF60SA60DSTU |
Stealth Rectifier
StealthTM Rectifier
8A, 600V Stealth Dual Series Diode
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| FGB20N6S2D FGH20N6S2D FGB20N6S2DT FGP20N6S2D |
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode
Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC :5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
600V, SMPS II Series N-Channel IGBT with Stealth Diode, TO-263/D2PAK Package
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| ISL9R460PF209 |
4A, 600V Stealth Diode
|
Fairchild Semiconductor
|
| ISL9R860P209 |
8A, 600V Stealth Diode
|
Fairchild Semiconductor
|
| ISL9R1560S3S |
15A, 600V Stealth⑩ Diode
15A 600V Stealth Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| FFP08S60S FFP08S60STU |
Stealth 2 Rectifier
|
Fairchild Semiconductor
|
| SDA-5000 1019-00-1290 1019-00-1298 |
Stealth Digital Analyzer
|
JDS Uniphase Corporation
|
| W1991 |
LTE Stealth Blade Antenna
|
Pulse A Technitrol Comp...
|
| ISL9R2480G2 |
24A/ 800V Stealth Diode
24A, 800V Stealth⑩ Diode
24A, 800V Stealth?/a> Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| MG200H1AL2 MG200H1FL1A |
V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module
(DISCRETE/OPTO)
|
Toshiba Semiconductor
|
