Part Number Hot Search : 
IDT72115 12XCT IP1P125 LT117 TOSHIBA KLC200 FST65200 GTXO560
Product Description
Full Text Search

MBM29DS163BE - (MBM29DS163BE/TE) FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT

MBM29DS163BE_1665529.PDF Datasheet


 Full text search : (MBM29DS163BE/TE) FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT
 Product Description search : (MBM29DS163BE/TE) FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT


 Related Part Number
PART Description Maker
MB84VB2000-10 MB84VB2001 MB84VB2001-10 PT 8C 8#20 PIN RECP 1M X 8 FLASH 3V PROM, 100 ns, PBGA48
8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
Fujitsu, Ltd.
Fujitsu Component Limited.
AT25DF081-UUN-T AT25DF081-MHN-Y AT25DF081-MHN-T AT 4 Mbit Uniform Sector, Serial Flash Memory 1M X 8 FLASH 1.8V PROM, PDSO8
8-megabit 1.65-volt Minimum SPI Serial Flash Memory
Atmel, Corp.
聚兴科技股份有限公司
ATMEL Corporation
CAT28F512HI-12T CAT28F512HI-15T CAT28F512HI-90T CA 512K-Bit CMOS Flash Memory
512 kb CMOS Flash Memory 64K X 8 FLASH 12V PROM, 120 ns, PDSO32
ON Semiconductor
S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
Spansion Inc.
Advanced Micro Devices, Inc.
Spansion, Inc.
http://
CAT28F001HI-12BT CAT28F001HI-12TT CAT28F001NI-12BT 1 Mb Boot Block Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Mb Boot Block Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
1 Mb Boot Block Flash Memory 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit CMOS Boot Block Flash Memory
ON Semiconductor
HY29LV160TT-12 HY29LV160TF-12 HY29LV160TT-70 HY29L 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PDSO48
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PBGA48
Circular Connector; No. of Contacts:55; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-55
http://
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
AM29LV160 AM29LV160BB70RSEB AM29LV160BB70REEB AM29    16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
6800uF 100WV 20% *NO Pb*
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 16Mb(2M×81Mx16, 3V, CMOS引导扇区闪存
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PBGA48
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PDSO48
VARISTOR METAL-OXIDE 150V RAD.3 10MM-DIA BULK 2M X 8 FLASH 3V PROM, 70 ns, PDSO44
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 90 ns, PDSO44
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
http://
GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM(宽30
Intel, Corp.
Intel Corp.
HY29LV320BF-80 HY29LV320BF-80I HY29LV320BT-12I HY2 32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 80 ns, PDSO48
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
122 x 32 pixel format, LED Backlight available 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
150 x 32 pixel format, LED Backlight available
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
http://
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
MX29F001TTC-90 MX29F001TTC-70 MX29F001TTC-12 MX29F 1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDIP32
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDSO32
x8 Flash EEPROM x8闪存EEPROM
Macronix International Co., Ltd.
 
 Related keyword From Full Text Search System
MBM29DS163BE Supply MBM29DS163BE maxim MBM29DS163BE stock MBM29DS163BE 资料 MBM29DS163BE Programmable
MBM29DS163BE size MBM29DS163BE filetype:pdf MBM29DS163BE Engine MBM29DS163BE Digital MBM29DS163BE Outputs
 

 

Price & Availability of MBM29DS163BE

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.67096996307373