| PART |
Description |
Maker |
| 1N5271 1N5230 1N5256 1N5248 1N5223 1N5267 1N5272 1 |
Pd=500mW, Vz=87V zener diode
Pd=500mW, Vz=27V zener diode
Pd=500mW, Vz=22V zener diode
MVSTBW 2,5/ 3-ST BK
MSTBW 2.5/12-G
500 mW Zener Diode 2.4 to 200 Volts
Pd=500mW, Vz=36V zener diode
Pd=500mW, Vz=19V zener diode
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MCC
Micro Commercial Compon...
Micro Commercial Components Corp.
http://
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| NTE5061A NTE5062A NTE5063A NTE5064A NTE5065A NTE50 |
Zener diode, 1 watt, -5% tolerance. Nominal zener voltage Vz = 68V. Zener test current Izt = 3.7mA.
Zener Diode, 1 Watt ±5% Tolerance
Zener Diode, 1 Watt 【5% Tolerance
Zener Diode 1 Watt 5% Tolerance
Zener Diode, 1 Watt 5% Tolerance
Zener Diode / 1 Watt 5% Tolerance
surface mount silicon Zener diodes 硅表面贴装齐纳二极管
Zener Diode, 1 Watt % Tolerance
10 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
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NTE[NTE Electronics]
Mitsubishi Electric, Corp.
NTE Electronics, Inc.
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| CRS0506 CRS05 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 开关电源的应用
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.36; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD
Switching Mode Power Supply Applications
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Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
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| CMS1006 CMS10 CMS10-06 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.8 to 14.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
Switching Mode Power Supply Applications
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.5 to 14.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.8 to 14.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
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Toshiba Semiconductor
Toshiba Corporation
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| 1N974B 1N963B 1N965B 1N962B 1N970B 1N960B 1N968D 1 |
0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 30V. Test current 4.2mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 75V. Test current 1.7mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 39V. Test current 3.2mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. -20% tolerance.
0.5W SILICON ZENER DIODES
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 50μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
PC 4/ 5-ST-7,62 .5W硅稳压二极管
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 51V. Test current 2.5mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 47V. Test current 2.7mA. -10% tolerance.
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JGD[Jinan Gude Electronic Device]
济南固锝电子器件有限公司
Jinan Gude Electronic Device Co., Ltd.
Semtech, Corp.
娴???洪??靛??ㄤ欢??????
Jinan Gude Electronic D...
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| 015Z9.1 015Z10 015Z11 015Z12 015Z2 015Z2.0 015Z2.2 |
DIODE (CONSTANT VOLTAGE REGULATION APPLICATIONS)
Silicon diode for constant voltage regulation applications
5.1V,Zener Diode(for Constant Voltage Regulation Application)(5.1V,用于持续稳压的齐纳二极管)
CAP 3900PF 100V 10% X7R AXIAL BULK S-MIL-PRF-39014
CAP 4.7UF 10V 10% TANT SMD-7343-31 TR-7
40 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor
240 x 320 pixel format (portrait mode), Compact LCD size
240 x 64 pixel format, CFL, LED, or EL Backlight available
8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
4.3V,Zener Diode(for Constant Voltage Regulation Application)(4.3V,用于持续稳压的齐纳二极管) 4.3V的，齐纳二极管（恒电压调节应用程序）.3V的，用于持续稳压的齐纳二极管
CAP RF 2.4PF 250V 0603 SMD 二极管（恒压规例申请
5.6V,Zener Diode(for Constant Voltage Regulation Application)(5.6V,用于持续稳压的齐纳二极管) 5.6V，齐纳二极管（恒电压调节应用程序）（5.6V，用于持续稳压的齐纳二极管）
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TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| UT2316L-AE3-R UT2316-AE3-R |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK N沟道增强模式
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.12; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
N-CHANNEL ENHANCEMENT MODE
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Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
|
| 1N4701-TAPE 1N4704C 1N4704A 1N4712D 1N4712C 1N4709 |
Diode Zener Single 14V 5% 500mW 2-Pin DO-35 Ammo
Diode Zener Single 17V 2% 500mW 2-Pin DO-35
Diode Zener Single 17V 5% 2-Pin DO-7
Diode Zener Single 28V 1% 500mW 2-Pin DO-35
Diode Zener Single 28V 2% 500mW 2-Pin DO-35
Diode Zener Single 24V 1% 500mW 2-Pin DO-35
Diode Zener Single 18V 1% 500mW 2-Pin DO-35
Diode Zener Single 15V 1% 500mW 2-Pin DO-35
Diode Zener Single 18V 2% 500mW 2-Pin DO-35
Diode Zener Single 22V 1% 500mW 2-Pin DO-35
Diode Zener Single 25V 1% 500mW 2-Pin DO-35
Diode Zener Single 13V 1% 500mW 2-Pin DO-35
Diode Zener Single 3V 1% 500mW 2-Pin DO-35
Diode Zener Single 39V 1% 500mW 2-Pin DO-35
Diode Zener Single 5.6V 1% 500mW 2-Pin DO-35
Diode Zener Single 8.2V 1% 500mW 2-Pin DO-35
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New Jersey Semiconductor
|
| E2K-C E2K-C25MY2 |
Long-distance capacitive proximity sensor
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.5 to 2.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.5 to 2.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 长途电容式接近传感
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Omron Electronics LLC
Omron Electronics, LLC
|
| DF2S5.6FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
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Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
