PART |
Description |
Maker |
AM29LV800T AM29LV800T-100 AM29LV800T-120 AM29LV800 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory Am29LV800 - 8 Megabit (1.048.576 x 8-Bit/524.288 x 16-Bit) CMOS 3.0 Volt-only. Sectored Flash Memory 8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory 512K X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC SPANSION LLC
|
AM29LV008T-100 AM29LV008B-100 AM29LV008B-120 AM29L |
8 Megabit (1,048,576 x 8-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
|
Advanced Micro Devices
|
HM514400A HM514400AJ-6 HM514400AJ-7 HM514400AJ-8 H |
1,048,576-word x 4-bid DRAM, 70ns 1,048,576-WORD x 4-BIT DYNAMIC RAM 1,048,576-word x 4-bid DRAM, 60ns 1,048,576-word x 4-bid DRAM, 80ns
|
HITACHI[Hitachi Semiconductor]
|
THM321000S-10 THM321000S-80 THM321000SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE 1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
HM514400B HM514400BL HM514400C HM514400CL HM514400 |
1,048,576-word x 4-bit dynamic random access memory, 80ns 1,048,576-word x 4-bit dynamic random access memory, 60ns 1/048/576-word X 4-bit Dynamic Random Access Memory 1,048,576-word x 4-bit dynamic random access memory, 70ns
|
Hitachi Semiconductor
|
MSM27C1602CZ |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM 1,048,576字16位或2097152字8位一次性可编程
|
OKI electronic components OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
|
THM321020S-10 THM321020S-80 THM321020SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 1048576 WORDS x 32 BIT DYNAMIC RAM MODULE 1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE 1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
THM361020S-10 THM361020S-80 THM361020SG-10 THM3610 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 1048576 WORDS x 36 BIT DYNAMIC RAM MODULE 1,048,576 WORDS x 36 BIT DYNAMIC RAM MODULE 1/048/576 WORDS x 36 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
M6MGB166S4BWG M6MGT166S4BWG M6MGB E99008 |
From old datasheet system CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
|
Mitsubishi Electric Semiconductor
|
MSM538052E |
524,288-Words x 16-bit or 1,048,576-Bytes x 8-bit MaskROM From old datasheet system
|
OKI
|
M6MGB_T166S4BWG M6MGB E99008_A |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY From old datasheet system
|
Mitsubishi
|