PART |
Description |
Maker |
2N604006 2N6042G 2N6040G 2N6043G 2N6045G 2N6040 2N |
Plastic Medium−Power Complementary Silicon Transistors Plastic Medium?Power Complementary Silicon Transistors
|
http:// ONSEMI[ON Semiconductor]
|
BD165 BD169 |
Plastic Medium Power Silicon NPN Transistor
|
Motorola Inc MOTOROLA[Motorola, Inc]
|
BDX53CG BDX53B07 |
Plastic Medium-Power Complementary Silicon Transistors
|
Rectron Semiconductor
|
BD676-D |
Plastic Medium-Power Silicon PNP Darlingtons
|
ON Semiconductor
|
MJE350 |
Plastic Medium Power PNP Silicon Transistor
|
New Jersey Semi-Conduct...
|
TIP120-D |
Plastic Medium-Power Complementary Silicon Transistors
|
ON Semiconductor
|
MJE10B1 MJE1093 MJE2003 MJE1103 MJE1102 MJE2092 MJ |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
|
MJE344G MJE34406 |
Plastic NPN Silicon Medium?Power Transistor
|
ON Semiconductor
|
CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|